Interfacial reactions of ultrahigh‐vacuum‐deposited Cu thin films on atomically cleaned (111)Si. II. Oxidation of silicon catalyzed by η‘‐Cu3Si at room temperature

1993 ◽  
Vol 74 (9) ◽  
pp. 5507-5509 ◽  
Author(s):  
C. S. Liu ◽  
L. J. Chen
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Ultrahigh Vacuum ◽  
Interfacial Reactions

Simultaneous Occurrence of Multiphases in the Interfacial Reactions of Ultrahigh Vacuum Deposited Ti, Hf and Cr Thin Films on (111)Si

1993 ◽  
Vol 311 ◽  
Author(s):  
W.W. Hsieh ◽  
J.J. Lin ◽  
M.M. Wang ◽  
L.L. Chen
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Ultrahigh Vacuum ◽  
Interfacial Reactions ◽  
Simultaneous Occurrence ◽  
Image Simulation ◽  
Reaction Sequence ◽  
Transmission Electron ◽  
Amorphous Interlayer

ABSTRACTSimultaneous occurrence of multiphases was observed in the interfacial reactions of ultrahigh vacuum deposited Ti, Hf and Cr thin films on (111)Si by high resolution transmission electron microscopy in conjunction with fast Fourier transform diffraction analysis and image simulation. For the three systems, an amorphous interlayer as well as a number of crystalline phase were found to form simultaneously in the early stages of interfacial reactions. The formation of multiphases appeared to be quite general in the initial stages of interfacial reactions of UHV deposited refractory thin films. The results called for a reexamination of generally accepted “difference” in reaction sequence between bulk and thin film couples.

XRD and XPS studies of room temperature spontaneous interfacial reaction of CeO2 thin films on Si and Si3N4 substrates

RSC Advances ◽  
2014 ◽  
Vol 4 (108) ◽  
pp. 62935-62939 ◽  
Author(s):  
Parthasarathi Bera ◽  
Chinnasamy Anandan
Keyword(s):  
Thin Films ◽  
Interfacial Reaction ◽  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Interfacial Reactions ◽  
X Ray Diffraction ◽  
X Ray

X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) investigations of interfacial reactions between Ce and Si have been carried out on as-deposited and 15 month aged CeO2/Si and CeO2/Si3N4 thin films.

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