Identification of the first nucleated phase in the interfacial reactions of ultrahigh vacuum deposited titanium thin films on silicon

1991 ◽  
Vol 58 (5) ◽  
pp. 463-465 ◽  
Author(s):  
M. H. Wang ◽  
L. J. Chen
Keyword(s):  
Thin Films ◽  
Ultrahigh Vacuum ◽  
Interfacial Reactions ◽  
Titanium Thin Films

Simultaneous Occurrence of Multiphases in the Interfacial Reactions of Ultrahigh Vacuum Deposited Ti, Hf and Cr Thin Films on (111)Si

1993 ◽  
Vol 311 ◽  
Author(s):  
W.W. Hsieh ◽  
J.J. Lin ◽  
M.M. Wang ◽  
L.L. Chen
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Ultrahigh Vacuum ◽  
Interfacial Reactions ◽  
Simultaneous Occurrence ◽  
Image Simulation ◽  
Reaction Sequence ◽  
Transmission Electron ◽  
Amorphous Interlayer

ABSTRACTSimultaneous occurrence of multiphases was observed in the interfacial reactions of ultrahigh vacuum deposited Ti, Hf and Cr thin films on (111)Si by high resolution transmission electron microscopy in conjunction with fast Fourier transform diffraction analysis and image simulation. For the three systems, an amorphous interlayer as well as a number of crystalline phase were found to form simultaneously in the early stages of interfacial reactions. The formation of multiphases appeared to be quite general in the initial stages of interfacial reactions of UHV deposited refractory thin films. The results called for a reexamination of generally accepted “difference” in reaction sequence between bulk and thin film couples.

In Situ Rheed and Hrem Study of Initial Stages of Interfacial Reactions of Uhv Deposited Titanium Thin Films on Silicon

1991 ◽  
Vol 222 ◽  
Author(s):  
M. H. Wang ◽  
L. J. Chen
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
High Energy ◽  
Interfacial Reactions ◽  
Silicide Formation ◽  
High Energy Electron ◽  
Transmission Electron ◽  
Titanium Thin Films ◽  
Amorphous Interlayer

ABSTRACTThe initial stages of interfacial reactions of ultrahigh vacuum (UHV) deposited Ti thin films on silicon have been studied by in-situ reflected high energy electron diffraction (RHEED) and transmission electron microscopy (TEM).An amorphous interlayer was found to form during the deposition of the first 1.7-nm-thick Ti layer. In samples annealed at 450 °C for 30–120 min, Ti5Si3, located at the Ti/a-interlayer interface, was identified to be the first nucleated phase. Ti5Si3, Ti5Si4, TiSi and C49-TiSi2 were observed in samples annealed at 475 °C for 30 and 60 min as well as at 500 °C for 10 and 20 min. Fundamental issues in silicide formation are discussed in light of the discovery of the formation of the amorphous interlayer and as many as four different silicide phases in the initial stages of interfacial reactions of UHV deposited Ti thin films on silicon.

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