Phase formation in the interfacial reactions of ultrahigh vacuum deposited titanium thin films on (111)Si

1992 ◽  
Vol 71 (12) ◽  
pp. 5918-5925 ◽  
Author(s):  
M. H. Wang ◽  
L. J. Chen
Keyword(s):  
Thin Films ◽  
Phase Formation ◽  
Ultrahigh Vacuum ◽  
Interfacial Reactions ◽  
Titanium Thin Films

Interfacial Reactions of Titanium Thin Films on P+-Implanted (001)Si

1988 ◽  
Vol 100 ◽  
Author(s):  
M. H. Wan ◽  
W. Lur ◽  
H. C. Cheng ◽  
L. J. Chen
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Phase Formation ◽  
Interfacial Reactions ◽  
Transmission Electron ◽  
Titanium Thin Films ◽  
Ion Implanted

ABSTRACTInterfacial reactions of titanium thin films on P+-implanted silicon have been studied by transmission electron microscopy.The presence of titanium thin films on P+-implanted silicon was found to alter the defect configuration in the recrystallized layer. Interfacial reactions of titanium thin films on silicon were also found to be influenced by the presence of dopants as well as changes in the microstructures of the substrate. The results are compared with those found in previous studies of Ti thin films on ion-implanted silicon as well as on unimplanted samples. The mechanisms for the chaiiges in defect configuration and phase formation are discussed.

Simultaneous Occurrence of Multiphases in the Interfacial Reactions of Ultrahigh Vacuum Deposited Ti, Hf and Cr Thin Films on (111)Si

1993 ◽  
Vol 311 ◽  
Author(s):  
W.W. Hsieh ◽  
J.J. Lin ◽  
M.M. Wang ◽  
L.L. Chen
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Ultrahigh Vacuum ◽  
Interfacial Reactions ◽  
Simultaneous Occurrence ◽  
Image Simulation ◽  
Reaction Sequence ◽  
Transmission Electron ◽  
Amorphous Interlayer

ABSTRACTSimultaneous occurrence of multiphases was observed in the interfacial reactions of ultrahigh vacuum deposited Ti, Hf and Cr thin films on (111)Si by high resolution transmission electron microscopy in conjunction with fast Fourier transform diffraction analysis and image simulation. For the three systems, an amorphous interlayer as well as a number of crystalline phase were found to form simultaneously in the early stages of interfacial reactions. The formation of multiphases appeared to be quite general in the initial stages of interfacial reactions of UHV deposited refractory thin films. The results called for a reexamination of generally accepted “difference” in reaction sequence between bulk and thin film couples.

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