Effect of trimethylsilane pressure on hot-wire chemical vapor deposition chemistry using vacuum ultraviolet laser ionization mass spectrometry

2013 ◽  
Vol 31 (6) ◽  
pp. 061606 ◽  
Author(s):  
Rim Toukabri ◽  
Yujun Shi
Keyword(s):  
Mass Spectrometry ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Vacuum Ultraviolet ◽  
Chemical Vapor ◽  
Ionization Mass Spectrometry ◽  
Ionization Mass ◽  
Laser Ionization ◽  
Hot Wire ◽  
Ultraviolet Laser

Radical Species Distributions in Hot-Wire Chemical Vapor Deposition Probed Via Threshold Ionization Mass Spectrometry and Direct Simulation Monte Carlo Techniques

2001 ◽  
Vol 664 ◽  
Author(s):  
Jason K. Holt ◽  
Maribeth Swiatek ◽  
David G. Goodwin ◽  
Harry A. Atwater ◽  
R.P. Muller ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Monte Carlo ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Direct Simulation Monte Carlo ◽  
Chemical Vapor ◽  
Ionization Mass Spectrometry ◽  
Ionization Mass ◽  
Hot Wire ◽  
Threshold Ionization

ABSTRACTMonte Carlo simulations of hot-wire chemical vapor deposition (HWCVD) gas ambients indicate different flux ratios (SiH3/Si and H/SiHx) under conditions for amorphous or polycrystalline silicon growth. Gas-phase reactions of Si with ambient SiH4 studied using abinitio methods reveals that collisional stabilization of the adduct (H3SiSiH) is unlikely under typical HWCVD growth pressures, but an energetically favorable, low-pressure pathway has been identified that leads to the formation of Si2H2 and H2. Threshold ionization mass spectrometry has revealed significant quantities of the radical SiH2 at HWCVD growth pressures, indicative of heterogeneous pyrolysis. Mass spectrometry at low pressures suggests that incident silane dissociatively adsorbs at the wire and undergoes sequential H elimination to produce subhydrides. Disilicon species were not detected in significant quantities at HWCVD growth pressures. Finally, hot wire operation in a pure H2 ambient yields SiH4 as the dominant etching product from the silicon-coated walls of the growth chamber.

Selective C–C and C–N bond activation in dopamine and norepinephrine under deep ultraviolet laser irradiation

2019 ◽  
Vol 55 (28) ◽  
pp. 4015-4018 ◽  
Author(s):  
Haiming Wu ◽  
Mengdi Guo ◽  
Mengzhou Yang ◽  
Zhixun Luo ◽  
Klavs Hansen
Keyword(s):  
Mass Spectrometry ◽  
Laser Irradiation ◽  
Bond Activation ◽  
Ionization Mass Spectrometry ◽  
Ionization Mass ◽  
Laser Ionization ◽  
Ultraviolet Laser ◽  
Deep Ultraviolet

Selective C–C bond and C–N bond activation in dopamine and norepinephrine is analyzed utilizing deep-ultraviolet laser ionization mass spectrometry (DUV-LIMS).

Ultrafast Deep-Ultraviolet Laser Ionization Mass Spectrometry Applicable To Identify Phenylenediamine Isomers

2018 ◽  
Vol 90 (17) ◽  
pp. 10635-10640 ◽  
Author(s):  
Haiming Wu ◽  
Chengqian Yuan ◽  
Hanyu Zhang ◽  
Guanhua Yang ◽  
Chaonan Cui ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Ionization Mass Spectrometry ◽  
Ionization Mass ◽  
Laser Ionization ◽  
Ultraviolet Laser ◽  
Deep Ultraviolet ◽  
Phenylenediamine Isomers

High Band Gap Nanocrystalline Tungsten Carbide (nc-WC) Thin Films Grown by Hot Wire Chemical Vapor Deposition (HW-CVD) Method

2018 ◽  
Vol 10 (3) ◽  
pp. 03001-1-03001-6 ◽  
Author(s):  
Bharat Gabhale ◽  
◽  
Ashok Jadhawar ◽  
Ajinkya Bhorde ◽  
Shruthi Nair ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Tungsten Carbide ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Cvd Method ◽  
High Band

scholarly journals Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 237
Author(s):  
M. Abul Hossion ◽  
B. M. Arora
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Deposition Technique ◽  
Boron Doped ◽  
Vapor Deposition Technique ◽  
Polycrystalline Silicon Film

Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.

Sign in / Sign up

Export Citation Format

Share Document