Temperature sensitivity of strained‐layer InGaAs/Ga(In)As(P)/GaInP separate‐confinement‐heterostructure quantum well lasers (λ∼980 nm)

1993 ◽  
Vol 73 (8) ◽  
pp. 3599-3602 ◽  
Author(s):  
G. Zhang ◽  
A. Ovtchinnikov
Keyword(s):  
Quantum Well ◽  
Temperature Sensitivity ◽  
Quantum Well Lasers ◽  
Strained Layer

Dominant mechanisms for the temperature sensitivity of 1.3 μm InP‐based strained‐layer multiple‐quantum‐well lasers

1995 ◽  
Vol 67 (8) ◽  
pp. 1054-1056 ◽  
Author(s):  
Shunji Seki ◽  
Hiromi Oohasi ◽  
Hideo Sugiura ◽  
Takuo Hirono ◽  
Kiyoyuki Yokoyama
Keyword(s):  
Quantum Well ◽  
Temperature Sensitivity ◽  
Multiple Quantum Well ◽  
Quantum Well Lasers ◽  
Multiple Quantum ◽  
Strained Layer

High-power 0.98-μm strained-layer quantum-well lasers with InGaP cladding

1994 ◽  
Vol 7 (3) ◽  
pp. 139-143 ◽  
Author(s):  
Tetsuro Ijichi ◽  
Michio Ohkubo ◽  
Akira Iketani ◽  
Toshio Kikuta
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Quantum Well Lasers ◽  
Strained Layer
Sign in / Sign up

Export Citation Format

Share Document