Study on the dominant mechanisms for the temperature sensitivity of threshold current in 1.3-μm InP-based strained-layer quantum-well lasers

1996 ◽  
Vol 32 (8) ◽  
pp. 1478-1486 ◽  
Author(s):  
S. Seki ◽  
H. Oohashi ◽  
H. Sugiura ◽  
T. Hirono ◽  
K. Yokoyama
Keyword(s):  
Quantum Well ◽  
Temperature Sensitivity ◽  
Threshold Current ◽  
Quantum Well Lasers ◽  
Strained Layer

Characteristics and Growth of Strained-Layer InGaAs/GaInAsP/GaInP Quantum Well Lasers

1992 ◽  
Vol 281 ◽  
Author(s):  
G. Zhang ◽  
A. Ovtchinnikov ◽  
J. Näppi ◽  
H. Asonen
Keyword(s):  
Quantum Well ◽  
Internal Quantum Efficiency ◽  
Gain Coefficient ◽  
Threshold Current ◽  
Quantum Well Lasers ◽  
Field Pattern ◽  
Single Quantum Well ◽  
Strained Layer ◽  
Waveguide Loss ◽  
Far Field Pattern

ABSTRACTStrained-layer InGaAs/GalnAsP/GalnP separate-confinement-heterostructure quantum well lasers emitting at 980 nm have been developed. The lowest threshold current densities obtained for the single-quantum-well and three-quantum-well lasers are 72 and 150 A/cm2, respectively. The internal quantum efficiency is as high as 94 %, and the internal waveguide loss 5.4 cm−1. The transparency current density and gain coefficient are 33 A/cm2 per well and 0.091 μm A−1, respectively. High characteristic temperatures ranging from 220 to 280 K was obtained. The vertical and lateral full-width at half-maximum of the far-field pattern of the ridge waveguide laser are 47° and 13°, respectively. The results are comparable with the best values reported for the InGaAs/AlGaAs lasers.

Low threshold current density 1.3-/spl mu/m strained-layer quantum-well lasers using n-type modulation doping

1994 ◽  
Vol 6 (10) ◽  
pp. 1165-1166 ◽  
Author(s):  
T. Yamamoto ◽  
T. Watanabe ◽  
S. Ide ◽  
I. Tanaka ◽  
H. Nobuhara ◽  
...  
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Well Lasers ◽  
Modulation Doping ◽  
Strained Layer ◽  
Low Threshold

Dominant mechanisms for the temperature sensitivity of 1.3 μm InP‐based strained‐layer multiple‐quantum‐well lasers

1995 ◽  
Vol 67 (8) ◽  
pp. 1054-1056 ◽  
Author(s):  
Shunji Seki ◽  
Hiromi Oohasi ◽  
Hideo Sugiura ◽  
Takuo Hirono ◽  
Kiyoyuki Yokoyama
Keyword(s):  
Quantum Well ◽  
Temperature Sensitivity ◽  
Multiple Quantum Well ◽  
Quantum Well Lasers ◽  
Multiple Quantum ◽  
Strained Layer
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