Dehydrogenation of defects and hot-electron degradation in GaN high-electron-mobility transistors

Y. S. Puzyrev; T. Roy; M. Beck; B. R. Tuttle; R. D. Schrimpf; D. M. Fleetwood; S. T. Pantelides

doi:10.1063/1.3524185

Dehydrogenation of defects and hot-electron degradation in GaN high-electron-mobility transistors

Journal of Applied Physics ◽

10.1063/1.3524185 ◽

2011 ◽

Vol 109 (3) ◽

pp. 034501 ◽

Cited By ~ 72

Author(s):

Y. S. Puzyrev ◽

T. Roy ◽

M. Beck ◽

B. R. Tuttle ◽

R. D. Schrimpf ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Hot Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2014.2332235 ◽

2014 ◽

Vol 61 (8) ◽

pp. 2793-2801 ◽

Cited By ~ 26

Author(s):

Milan Tapajna ◽

Nicole Killat ◽

Vassil Palankovski ◽

Dagmar Gregusova ◽

Karol Cico ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Hot Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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The role of ultrathin AlN barrier in the reduction in the hot electron and self-heating effects for GaN-based double-heterojunction high electron mobility transistors

Journal of Applied Physics ◽

10.1063/1.3481349 ◽

2010 ◽

Vol 108 (5) ◽

pp. 054501 ◽

Cited By ~ 16

Author(s):

L. Wang ◽

W. D. Hu ◽

X. S. Chen ◽

W. Lu

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Hot Electron ◽

High Electron Mobility ◽

Self Heating ◽

Electron Mobility Transistors ◽

Heating Effects ◽

Double Heterojunction

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Self-heating simulation of GaN-based metal-oxide-semiconductor high-electron-mobility transistors including hot electron and quantum effects

Journal of Applied Physics ◽

10.1063/1.2354327 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074501 ◽

Cited By ~ 47

Author(s):

W. D. Hu ◽

X. S. Chen ◽

Z. J. Quan ◽

C. S. Xia ◽

W. Lu ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

Hot Electron ◽

High Electron Mobility ◽

Self Heating ◽

Electron Mobility Transistors

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Hot electron generation under large-signal radio frequency operation of GaN high-electron-mobility transistors

Applied Physics Letters ◽

10.1063/1.4991665 ◽

2017 ◽

Vol 111 (1) ◽

pp. 013506 ◽

Cited By ~ 8

Author(s):

Alvaro D. Latorre-Rey ◽

Flavio F. M. Sabatti ◽

John D. Albrecht ◽

Marco Saraniti

Keyword(s):

Radio Frequency ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Hot Electron ◽

Large Signal ◽

High Electron Mobility ◽

Electron Generation ◽

Electron Mobility Transistors

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Erratum: “Hot electron generation under large-signal radio frequency operation of GaN high-electron-mobility transistors” [Appl. Phys. Lett. 111, 013506 (2017)]

Applied Physics Letters ◽

10.1063/1.5003410 ◽

2017 ◽

Vol 111 (12) ◽

pp. 129901

Author(s):

Alvaro D. Latorre-Rey ◽

Flavio F. M. Sabatti ◽

John D. Albrecht ◽

Marco Saraniti

Keyword(s):

Radio Frequency ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Hot Electron ◽

Large Signal ◽

High Electron Mobility ◽

Electron Generation ◽

Electron Mobility Transistors

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Spectrum of hot‐electron luminescence from high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.106089 ◽

1991 ◽

Vol 59 (18) ◽

pp. 2257-2259 ◽

Cited By ~ 14

Author(s):

Hans P. Zappe ◽

D. J. As

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Hot Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design

IEEE Electron Device Letters ◽

10.1109/led.2015.2474116 ◽

2015 ◽

Vol 36 (10) ◽

pp. 1011-1014 ◽

Cited By ~ 16

Author(s):

Davide Bisi ◽

Alessandro Chini ◽

Fabio Soci ◽

Antonio Stocco ◽

Matteo Meneghini ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Hot Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Buffer Design

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Hot-electron induced defect generation in AlGaN/GaN high electron mobility transistors

Solid-State Electronics ◽

10.1016/j.sse.2012.06.014 ◽

2013 ◽

Vol 79 ◽

pp. 11-13 ◽

Cited By ~ 8

Author(s):

Hemant Rao ◽

Gijs Bosman

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Hot Electron ◽

High Electron Mobility ◽

Defect Generation ◽

Electron Mobility Transistors

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Hot electron effects on undoped AlGaN/GaN high electron mobility transistors

GaAs Reliability 2002 Workshop ◽

10.1109/gaas.2002.1167856 ◽

2003 ◽

Cited By ~ 1

Author(s):

H. Kim ◽

A. Vertiatchikh ◽

V. Tilak ◽

R.M. Thompson ◽

T. Prunty ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Hot Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Electron Effects

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Hot-electron-induced degradation of pseudomorphic high-electron mobility transistors

IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers ◽

10.1109/mcs.1995.470978 ◽

2002 ◽

Cited By ~ 27

Author(s):

Y.A. Tkachenko ◽

C.J. Wei ◽

J.C.M. Hwang ◽

T.D. Harris ◽

R.D. Grober ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Hot Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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