The role of ultrathin AlN barrier in the reduction in the hot electron and self-heating effects for GaN-based double-heterojunction high electron mobility transistors

2010 ◽  
Vol 108 (5) ◽  
pp. 054501 ◽  
Author(s):  
L. Wang ◽  
W. D. Hu ◽  
X. S. Chen ◽  
W. Lu
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Hot Electron ◽  
High Electron Mobility ◽  
Self Heating ◽  
Electron Mobility Transistors ◽  
Heating Effects ◽  
Double Heterojunction

Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors

2014 ◽  
Vol 61 (8) ◽  
pp. 2793-2801 ◽  
Author(s):  
Milan Tapajna ◽  
Nicole Killat ◽  
Vassil Palankovski ◽  
Dagmar Gregusova ◽  
Karol Cico ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Hot Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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