scholarly journals Erratum: “Hot electron generation under large-signal radio frequency operation of GaN high-electron-mobility transistors” [Appl. Phys. Lett. 111, 013506 (2017)]

2017 ◽  
Vol 111 (12) ◽  
pp. 129901
Author(s):  
Alvaro D. Latorre-Rey ◽  
Flavio F. M. Sabatti ◽  
John D. Albrecht ◽  
Marco Saraniti
Keyword(s):  
Radio Frequency ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Hot Electron ◽  
Large Signal ◽  
High Electron Mobility ◽  
Electron Generation ◽  
Electron Mobility Transistors

Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors

2014 ◽  
Vol 61 (8) ◽  
pp. 2793-2801 ◽  
Author(s):  
Milan Tapajna ◽  
Nicole Killat ◽  
Vassil Palankovski ◽  
Dagmar Gregusova ◽  
Karol Cico ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Hot Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

scholarly journals Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation

2015 ◽  
Vol 106 (21) ◽  
pp. 213502 ◽  
Author(s):  
Tommaso Brazzini ◽  
Michael A. Casbon ◽  
Huarui Sun ◽  
Michael J. Uren ◽  
Jonathan Lees ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Hot Electrons ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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