Hall mobility measurements in enhancement-mode GaAs field-effect transistors with Al2O3 gate dielectric

2010 ◽  
Vol 97 (21) ◽  
pp. 213506 ◽  
Author(s):  
D. Shahrjerdi ◽  
J. Nah ◽  
B. Hekmatshoar ◽  
T. Akyol ◽  
M. Ramon ◽  
...  
Keyword(s):  
Hall Mobility ◽  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Enhancement Mode ◽  
Al2o3 Gate Dielectric

High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing atomic layer deposited Al2O3 gate dielectric

2009 ◽  
Vol 95 (15) ◽  
pp. 152113 ◽  
Author(s):  
Daniel J. Lichtenwalner ◽  
Veena Misra ◽  
Sarit Dhar ◽  
Sei-Hyung Ryu ◽  
Anant Agarwal
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Atomic Layer ◽  
Lateral Field ◽  
Enhancement Mode ◽  
Al2o3 Gate Dielectric

Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT

Nanoscale ◽  
2015 ◽  
Vol 7 (19) ◽  
pp. 8695-8700 ◽  
Author(s):  
Changjian Zhou ◽  
Xinsheng Wang ◽  
Salahuddin Raju ◽  
Ziyuan Lin ◽  
Daniel Villaroman ◽  
...  
Keyword(s):  
Low Power ◽  
Field Effect ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
Power Device ◽  
Enhancement Mode ◽  
High K ◽  
High K Gate Dielectric

Ultra high-k dielectric enables low-voltage enhancement-mode MoS2 transistor with high ON/OFF ratio, leading to low-power device.

Fast and slow transient charging in various III-V field-effect transistors with atomic-layer-deposited-Al2O3 gate dielectric

2013 ◽  
Vol 102 (2) ◽  
pp. 022104 ◽  
Author(s):  
Michael E. Ramón ◽  
Tarik Akyol ◽  
Davood Shahrjerdi ◽  
Chadwin D. Young ◽  
Julian Cheng ◽  
...  
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Atomic Layer ◽  
Al2o3 Gate Dielectric
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