Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 gate dielectric

Han Zhao; Davood Shahrjerdi; Feng Zhu; Manhong Zhang; Hyoung-Sub Kim; Injo OK; Jung Hwan Yum; Sung Il Park; Sanjay K. Banerjee; Jack C. Lee

doi:10.1063/1.2937117

Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 gate dielectric

Applied Physics Letters ◽

10.1063/1.2937117 ◽

2008 ◽

Vol 92 (23) ◽

pp. 233508 ◽

Cited By ~ 21

Author(s):

Han Zhao ◽

Davood Shahrjerdi ◽

Feng Zhu ◽

Manhong Zhang ◽

Hyoung-Sub Kim ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Al2o3 Gate Dielectric

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InAs inserted InGaAs buried channel metal-oxide-semiconductor field-effect-transistors with atomic-layer-deposited gate dielectric

Applied Physics Letters ◽

10.1063/1.3559609 ◽

2011 ◽

Vol 98 (8) ◽

pp. 082106 ◽

Cited By ~ 29

Author(s):

Fei Xue ◽

Han Zhao ◽

Yen-Ting Chen ◽

Yanzhen Wang ◽

Fei Zhou ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Buried Channel

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Effect of indium concentration on InGaAs channel metal-oxide-semiconductor field-effect transistors with atomic layer deposited gate dielectric

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3597199 ◽

2011 ◽

Vol 29 (4) ◽

pp. 040601 ◽

Cited By ~ 3

Author(s):

Fei Xue ◽

Han Zhao ◽

Yen-Ting Chen ◽

Yanzhen Wang ◽

Fei Zhou ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Indium Concentration

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Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2356902 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074108 ◽

Cited By ~ 13

Author(s):

Chih-Hsiang Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Negative transconductance effect in metal oxide semiconductor field effect transistors fabricated with Ta/sub 2/O/sub 5/ gate dielectric

Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503) ◽

10.1109/hkedm.2000.904206 ◽

2002 ◽

Author(s):

B.C.M. Lai ◽

J.Y.M. Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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The Influence of Hf-Composition on Atomic Layer Deposition HfSiON Gated Metal–Oxide–Semiconductor Field-Effect Transistors after Channel-Hot-Carrier Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c009 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C009 ◽

Cited By ~ 5

Author(s):

Shuang-Yuan Chen ◽

Hung-Wen Chen ◽

Chuan-Hsi Liu ◽

Li-Wei Cheng

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Layer Deposition ◽

Hot Carrier Stress

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Off‐state leakage currents in n‐channel metal‐oxide‐semiconductor field‐effect transistors with 10‐nm thermally nitrided and reoxidized nitrided oxides as the gate dielectric

Applied Physics Letters ◽

10.1063/1.105826 ◽

1991 ◽

Vol 59 (23) ◽

pp. 3006-3008 ◽

Cited By ~ 5

Author(s):

S. Fleischer ◽

Z. H. Liu ◽

P. T. Lai ◽

P. K. Ko ◽

Y. C. Cheng

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Leakage Currents

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Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition

Applied Surface Science ◽

10.1016/j.apsusc.2018.05.191 ◽

2018 ◽

Vol 461 ◽

pp. 255-259 ◽

Cited By ~ 3

Author(s):

R. Stoklas ◽

D. Gregušová ◽

S. Hasenöhrl ◽

E. Brytavskyi ◽

M. Ťapajna ◽

...

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Layer Deposition ◽

Heterostructure Field Effect Transistors

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Inversion-type indium phosphide metal-oxide-semiconductor field-effect transistors with equivalent oxide thickness of 12Å using stacked HfAlOx∕HfO2 gate dielectric

Applied Physics Letters ◽

10.1063/1.2943186 ◽

2008 ◽

Vol 92 (25) ◽

pp. 253506 ◽

Cited By ~ 22

Author(s):

Han Zhao ◽

Davood Shahrjerdi ◽

Feng Zhu ◽

Hyoung-Sub Kim ◽

Injo OK ◽

...

Keyword(s):

Indium Phosphide ◽

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Equivalent Oxide Thickness

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GaAs-based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition

Journal of Electronic Materials ◽

10.1007/s11664-004-0220-9 ◽

2004 ◽

Vol 33 (8) ◽

pp. 912-915 ◽

Cited By ~ 12

Author(s):

P. D. Ye ◽

G. D. Wilk ◽

B. Yang ◽

J. Kwo ◽

H. -J. L. Gossmann ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition

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Energy distribution of interface traps in germanium metal-oxide-semiconductor field effect transistors with HfO2 gate dielectric and its impact on mobility

Applied Physics Letters ◽

10.1063/1.2976632 ◽

2008 ◽

Vol 93 (8) ◽

pp. 083510 ◽

Cited By ~ 9

Author(s):

Ruilong Xie ◽

Nan Wu ◽

Chen Shen ◽

Chunxiang Zhu

Keyword(s):

Metal Oxide ◽

Energy Distribution ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps

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