Fast and slow transient charging in various III-V field-effect transistors with atomic-layer-deposited-Al2O3 gate dielectric

2013 ◽  
Vol 102 (2) ◽  
pp. 022104 ◽  
Author(s):  
Michael E. Ramón ◽  
Tarik Akyol ◽  
Davood Shahrjerdi ◽  
Chadwin D. Young ◽  
Julian Cheng ◽  
...  
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Atomic Layer ◽  
Al2o3 Gate Dielectric

High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing atomic layer deposited Al2O3 gate dielectric

2009 ◽  
Vol 95 (15) ◽  
pp. 152113 ◽  
Author(s):  
Daniel J. Lichtenwalner ◽  
Veena Misra ◽  
Sarit Dhar ◽  
Sei-Hyung Ryu ◽  
Anant Agarwal
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Atomic Layer ◽  
Lateral Field ◽  
Enhancement Mode ◽  
Al2o3 Gate Dielectric

scholarly journals High-yield of memory elements from carbon nanotube field-effect transistors with atomic layer deposited gate dielectric

2008 ◽  
Vol 10 (10) ◽  
pp. 103019 ◽  
Author(s):  
Marcus Rinkiö ◽  
Andreas Johansson ◽  
Marina Y Zavodchikova ◽  
J Jussi Toppari ◽  
Albert G Nasibulin ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Atomic Layer ◽  
High Yield

Hall mobility measurements in enhancement-mode GaAs field-effect transistors with Al2O3 gate dielectric

2010 ◽  
Vol 97 (21) ◽  
pp. 213506 ◽  
Author(s):  
D. Shahrjerdi ◽  
J. Nah ◽  
B. Hekmatshoar ◽  
T. Akyol ◽  
M. Ramon ◽  
...  
Keyword(s):  
Hall Mobility ◽  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Enhancement Mode ◽  
Al2o3 Gate Dielectric

scholarly journals Organic Field-Effect Transistors with a Bilayer Gate Dielectric Comprising an Oxide Nanolaminate Grown by Atomic Layer Deposition

2016 ◽  
Vol 8 (44) ◽  
pp. 29872-29876 ◽  
Author(s):  
Cheng-Yin Wang ◽  
Canek Fuentes-Hernandez ◽  
Minseong Yun ◽  
Ankit Singh ◽  
Amir Dindar ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Atomic Layer ◽  
Organic Field Effect Transistors ◽  
Layer Deposition

Electrical Characterization of Epitaxial Graphene Field-Effect Transistors with High-k Al2O3 Gate Dielectric Fabricated on SiC Substrates

2015 ◽  
Vol 821-823 ◽  
pp. 937-940 ◽  
Author(s):  
Toby Hopf ◽  
Konstantin Vassilevski ◽  
Enrique Escobedo-Cousin ◽  
Peter King ◽  
Nicholas G. Wright ◽  
...  
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Electrical Characterization ◽  
Atomic Layer ◽  
Epitaxial Graphene ◽  
Vacuum Sublimation ◽  
Layer Deposition ◽  
High K

Top-gated field-effect transistors have been created from bilayer epitaxial graphene samples that were grown on SiC substrates by a vacuum sublimation approach. A high-quality dielectric layer of Al2O3was grown by atomic layer deposition to function as the gate oxide, with an e-beam evaporated seed layer utilized to promote uniform growth of Al2O3over the graphene. Electrical characterization has been performed on these devices, and temperature-dependent measurements yielded a rise in the maximum transconductance and a significant shifting of the Dirac point as the operating temperature of the transistors was increased.

scholarly journals First demonstration of robust tri-gate β-Ga2O3 nano-membrane field-effect transistors

2021 ◽  
Author(s):  
Hagyoul Bae ◽  
Tae Joon Park ◽  
Jinhyun Noh ◽  
Wonil Chung ◽  
Mengwei Si ◽  
...  
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Atomic Layer ◽  
Transfer Characteristic ◽  
Subthreshold Slope ◽  
Si Substrate ◽  
Current Voltage ◽  
First Time

Abstract Nano-membrane tri-gate β-gallium oxide (β-Ga2O3) field-effect transistors (FETs) on SiO2/Si substrate fabricated via exfoliation have been demonstrated for the first time. By employing electron beam lithography, the minimum-sized features can be defined with the footprint channel width of 50 nm. For high-quality interface between β-Ga2O3 and gate dielectric, atomic layer-deposited 15-nm-thick aluminum oxide (Al2O3) was utilized with Tri-methyl-aluminum (TMA) self-cleaning surface treatment. The fabricated devices demonstrate extremely low subthreshold slope (SS) of 61 mV/dec, high drain current (I DS) ON/OFF ratio of 1.5 × 109, and negligible transfer characteristic hysteresis. We also experimentally demonstrated robustness of these devices with current–voltage (I–V) characteristics measured at temperatures up to 400 °C.

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