High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing atomic layer deposited Al2O3 gate dielectric

2009 ◽  
Vol 95 (15) ◽  
pp. 152113 ◽  
Author(s):  
Daniel J. Lichtenwalner ◽  
Veena Misra ◽  
Sarit Dhar ◽  
Sei-Hyung Ryu ◽  
Anant Agarwal
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Atomic Layer ◽  
Lateral Field ◽  
Enhancement Mode ◽  
Al2o3 Gate Dielectric

Hall mobility measurements in enhancement-mode GaAs field-effect transistors with Al2O3 gate dielectric

2010 ◽  
Vol 97 (21) ◽  
pp. 213506 ◽  
Author(s):  
D. Shahrjerdi ◽  
J. Nah ◽  
B. Hekmatshoar ◽  
T. Akyol ◽  
M. Ramon ◽  
...  
Keyword(s):  
Hall Mobility ◽  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Enhancement Mode ◽  
Al2o3 Gate Dielectric

Fast and slow transient charging in various III-V field-effect transistors with atomic-layer-deposited-Al2O3 gate dielectric

2013 ◽  
Vol 102 (2) ◽  
pp. 022104 ◽  
Author(s):  
Michael E. Ramón ◽  
Tarik Akyol ◽  
Davood Shahrjerdi ◽  
Chadwin D. Young ◽  
Julian Cheng ◽  
...  
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Atomic Layer ◽  
Al2o3 Gate Dielectric

Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT

Nanoscale ◽  
2015 ◽  
Vol 7 (19) ◽  
pp. 8695-8700 ◽  
Author(s):  
Changjian Zhou ◽  
Xinsheng Wang ◽  
Salahuddin Raju ◽  
Ziyuan Lin ◽  
Daniel Villaroman ◽  
...  
Keyword(s):  
Low Power ◽  
Field Effect ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
Power Device ◽  
Enhancement Mode ◽  
High K ◽  
High K Gate Dielectric

Ultra high-k dielectric enables low-voltage enhancement-mode MoS2 transistor with high ON/OFF ratio, leading to low-power device.

scholarly journals High-yield of memory elements from carbon nanotube field-effect transistors with atomic layer deposited gate dielectric

2008 ◽  
Vol 10 (10) ◽  
pp. 103019 ◽  
Author(s):  
Marcus Rinkiö ◽  
Andreas Johansson ◽  
Marina Y Zavodchikova ◽  
J Jussi Toppari ◽  
Albert G Nasibulin ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Atomic Layer ◽  
High Yield

scholarly journals Advances in the fabrication of graphene transistors on flexible substrates

2017 ◽  
Vol 8 ◽  
pp. 467-474 ◽  
Author(s):  
Gabriele Fisichella ◽  
Stella Lo Verso ◽  
Silvestra Di Marco ◽  
Vincenzo Vinciguerra ◽  
Emanuela Schilirò ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
High Sensitivity ◽  
Atomic Layer ◽  
Transparent Electrode ◽  
Large Area ◽  
Sensing Applications ◽  
Dielectric Performance

Graphene is an ideal candidate for next generation applications as a transparent electrode for electronics on plastic due to its flexibility and the conservation of electrical properties upon deformation. More importantly, its field-effect tunable carrier density, high mobility and saturation velocity make it an appealing choice as a channel material for field-effect transistors (FETs) for several potential applications. As an example, properly designed and scaled graphene FETs (Gr-FETs) can be used for flexible high frequency (RF) electronics or for high sensitivity chemical sensors. Miniaturized and flexible Gr-FET sensors would be highly advantageous for current sensors technology for in vivo and in situ applications. In this paper, we report a wafer-scale processing strategy to fabricate arrays of back-gated Gr-FETs on poly(ethylene naphthalate) (PEN) substrates. These devices present a large-area graphene channel fully exposed to the external environment, in order to be suitable for sensing applications, and the channel conductivity is efficiently modulated by a buried gate contact under a thin Al2O3 insulating film. In order to be compatible with the use of the PEN substrate, optimized deposition conditions of the Al2O3 film by plasma-enhanced atomic layer deposition (PE-ALD) at a low temperature (100 °C) have been developed without any relevant degradation of the final dielectric performance.

scholarly journals Graphene Oxide/Polystyrene Bilayer Gate Dielectrics for Low-Voltage Organic Field-Effect Transistors

2018 ◽  
Vol 9 (1) ◽  
pp. 2 ◽  
Author(s):  
Sooji Nam ◽  
Yong Jeong ◽  
Joo Kim ◽  
Hansol Yang ◽  
Jaeyoung Jang
Keyword(s):  
Graphene Oxide ◽  
Field Effect ◽  
High Performance ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Operating Voltage ◽  
Organic Field Effect Transistors ◽  
Gate Leakage

Here, we report on the use of a graphene oxide (GO)/polystyrene (PS) bilayer as a gate dielectric for low-voltage organic field-effect transistors (OFETs). The hydrophilic functional groups of GO cause surface trapping and high gate leakage, which can be overcome by introducing a layer of PS—a hydrophobic polymer—onto the top surface of GO. The GO/PS gate dielectric shows reduced surface roughness and gate leakage while maintaining a high capacitance of 37.8 nF cm−2. The resulting OFETs show high-performance operation with a high mobility of 1.05 cm2 V−1 s−1 within a low operating voltage of −5 V.

Study of Solid/liquid Interfaces in Organic Field-effect Transistors with Ionic Liquids

2009 ◽  
Vol 1154 ◽  
Author(s):  
Shimpei Ono ◽  
Kazumoto Miwa ◽  
Shiro Seki ◽  
Jun Takeya
Keyword(s):  
Ionic Liquid ◽  
Field Effect ◽  
Carrier Mobility ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Double Layers ◽  
Liquid Interfaces ◽  
Organic Thin Film ◽  
Solid Liquid

AbstractWe report high-mobility rubrene single-crystal field-effect transistors with ionic-liquid electrolytes used for gate dielectric layers. As the result of fast ionic diffusion to form electric double layers, their capacitances remain more than 1.0 μF/cm2 even at 0.1 MHz. With high carrier mobility of 9.5 cm2/Vs in the rubrene crystal, pronounced current amplification is achieved at the gate voltage of only 0.2 V, which is two orders of magnitude smaller than that necessary for organic thin-film transistors with dielectric gate insulators. The results demonstrate that the ionic-liquid/organic semiconductor interfaces are suited to realize low-power and fast-switching field-effect transistors without sacrificing carrier mobility in forming the solid/liquid interfaces.

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