Effects of Hydrogen or Nitrogen on Growth of Oxygen-Related Defects in Germanium

1992 ◽  
Vol 262 ◽  
Author(s):  
Noboru Makihara ◽  
Kazuyoshi Ito ◽  
Kaoru Mizuno ◽  
Kotaro Ono
Keyword(s):  
Electron Irradiation ◽  
Electron Trap ◽  
Hydrogen Ions ◽  
Nitrogen Implantation ◽  
Hydrogen Atoms ◽  
Active Centers ◽  
Defect Migration ◽  
Defect Growth ◽  
Oxygen Related Defect ◽  
Related Defect

ABSTRACTOxygen-doped germanium crystals were used to demonstrate the interaction between implanted hydrogen or nitrogen atoms and the oxygen-related defects. The electron trap at Eo-0.26eV associated with the germanium A-center was found to be formed by electron irradiation. Another level at Eo-0.21eV also was observed on annealing at 120 °C. As for the sample implanted with hydrogen ions following electron irradiation, the trap concentration is four times as large as that for electron irradiation alone. It is probable that the germanium A-centers produced by electron irradiation capture hydrogen atoms and increase electrically active centers. After nitrogen implantation following electron irradiation, the Eo-0.26eV level almost annealed out at 140 °C and the trap at Eo-0.21eV wasn't observed. We propose that the reduction in the oxygen-related defect growth is due to the prevention of defect migration with nitrogen atoms.

Study of Substrate Induced Deep Level Defects in Bulk GaN Layers Grown by Molecular Beam Epitaxy Using Deep Level Transient Spectroscopy

2011 ◽  
Vol 295-297 ◽  
pp. 777-780 ◽  
Author(s):  
M. Ajaz Un Nabi ◽  
M. Imran Arshad ◽  
Adnan Ali ◽  
M. Asghar ◽  
M. A Hasan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Deep Level Transient Spectroscopy ◽  
Molecular Beam ◽  
Deep Level ◽  
Diffusion Mechanism ◽  
Electron Trap ◽  
Si Substrate ◽  
Bulk Gan ◽  
Related Defect ◽  
Transient Spectroscopy

In this paper we have investigated the substrate-induced deep level defects in bulk GaN layers grown onp-silicon by molecular beam epitaxy. Representative deep level transient spectroscopy (DLTS) performed on Au-GaN/Si/Al devices displayed only one electron trap E1at 0.23 eV below the conduction band. Owing to out-diffusion mechanism; silicon diffuses into GaN layer from Si substrate maintained at 1050°C, E1level is therefore, attributed to the silicon-related defect. This argument is supported by growth of SiC on Si substrate maintained at 1050°C in MBE chamber using fullerene as a single evaporation source.

Exciton and Defect Photoluminescence Signatures in Single Crystal Rubrene

2006 ◽  
Vol 965 ◽  
Author(s):  
Oleg Mitrofanov ◽  
David V Lang ◽  
Christian Kloc ◽  
Theo Siegrist ◽  
Woo-Young So ◽  
...  
Keyword(s):  
Radiative Recombination ◽  
Photoluminescence Spectra ◽  
Photoluminescence Band ◽  
Exciton Dissociation ◽  
Acceptor Center ◽  
Oxygen Related Defect ◽  
Recombination Processes ◽  
Photo Conductivity ◽  
Exciton Recombination ◽  
Related Defect

ABSTRACTRadiative recombination processes provide valuable information about exciton dynamics and allow detection of defects in rubrene crystals. We demonstrate that the photoluminescence spectra of crystalline rubrene reflect exciton dissociation through oxygen-related defects in addition to the direct exciton recombination. The defect-assisted exciton dissociation results in a well-defined photoluminescence band. These defects play an important role in charge transport. Dark- and photo-conductivity is higher in rubrene crystals with a large density of the defects. The observations strongly suggest that the oxygen-related defect forms a bandgap state and acts as an acceptor center in crystalline rubrene.

Mineral reservoirs and behaviors of hydrogen in Earth’s lower mantle

2020 ◽  
Author(s):  
Qingyang Hu ◽  
Ho-kwang Mao
Keyword(s):  
Lower Mantle ◽  
Hydrogen Ions ◽  
Geochemical Processes ◽  
Transport Mechanisms ◽  
Hydrogen Atoms ◽  
And Behaviors ◽  
Isotopic Mixing ◽  
Laser Heated ◽  
Diffusion Of Hydrogen

<p>The incorporation of H into minerals imposes profound effects on their physicochemical signatures of the solid Earth. The locations of hydrogen reservoirs are detected by seismology. However, the mineral responsible for storing large quantity of hydrogen, particularly in Earth’s lower mantle is still controversial. Combining a set of in-situ probes at high pressure-temperature and first principles simulation, we investigated the solubility and behaviors of H in silica and hydroxide up to the conditions found at the core-mantle boundary. The solubility of hydrogen keeps high in those minerals even along the mantle geotherm. Under deep lower mantle pressures, hydrogen atoms are free from the hydroxyl bonding and becomes highly diffusive. The swift diffusion of hydrogen ions induces soaring electrical conductivity when the sample is laser heated. Those exotic properties indicate novel transport mechanisms for both charge and mass at Earth’s deep lower mantle. The potential of hydrogen enriched volatile reservoirs may carry major impacts on the electrical and magnetic behaviors, as well as redox, H isotopic mixing, and other geochemical processes in the Earth’s deep interiors.</p>

Hydrogen Permeation and Its Impacts on the Electrical Performance of Stacked ZrO2/Al2O3/ZrO2 Films

2020 ◽  
Vol 20 (11) ◽  
pp. 6638-6642
Author(s):  
Pyungho Choi ◽  
Youngseung Cho ◽  
Byoungdeog Choi
Keyword(s):  
Oxygen Vacancy ◽  
Leakage Current ◽  
Hydrogen Permeation ◽  
Random Access ◽  
Electrical Performance ◽  
Hydrogen Ions ◽  
Hydrogen Atoms ◽  
Access Memory ◽  
Conduction Electrons ◽  
Dielectric Capacitance

In this study, the effects of hydrogenation on the dielectric capacitance and leakage current of ZrO2/Al2O3/ZrO2 (ZAZ) films for dynamic-random-access memory (DRAM) capacitors were examined. Hydrogen permeation into ZAZ films reduced the dielectric capacitance and increased the leakage current with continued exposure to hydrogen during the forming gas annealing process. More specifically, the hydrogen ions distributed in the grain boundaries and at the Z/A interfaces appeared to disrupt the dipole motion and diminish the dielectric constant of the film, resulting in a decreased dielectric capacitance. Furthermore, the reaction of hydrogen atoms with the pre-existing oxygen of the ZrO2 films resulted in an oxygen vacancy with two captured electrons. Conduction electrons freed via ionization of the oxygen vacancy increased the conductivity of the ZAZ films, thereby increasing the leakage current throughout the ZAZ films.

On the nature of the oxygen-related defect in aluminum nitride

1990 ◽  
Vol 5 (8) ◽  
pp. 1763-1773 ◽  
Author(s):  
J. H. Harris ◽  
R. A. Youngman ◽  
R. G. Teller
Keyword(s):  
Thermal Conductivity ◽  
Aluminum Nitride ◽  
Lattice Parameter ◽  
Extended Defects ◽  
Inversion Domain ◽  
Transmission Electron ◽  
Oxygen Related Defect ◽  
Diffraction Lattice ◽  
Related Defect ◽  
Oxygen Concentrations

The oxygen-related defect in an aluminum nitride (AIN) single crystal and in polycrystalline ceramics is investigated utilizing photoluminescence spectroscopy, thermal conductivity measurements, x-ray diffraction lattice parameter measurements, and transmission electron microscopy. The results of these measurements indicate that at oxygen concentrations near 0.75 at.%, a transition in the oxygen accommodating defect occurs. On both sides of this transition, simple structural models for the oxygen defect are proposed and shown to be in good agreement with the thermal conductivity and lattice parameter measurements, and to be consistent with the formation of various extended defects (e.g., inversion domain boundaries) at higher oxygen concentrations.

Boron-Oxygen-Related Defect in Silicon

2011 ◽  
Vol 178-179 ◽  
pp. 178-182 ◽  
Author(s):  
Lyudmila I. Khirunenko ◽  
Yurii V. Pomozov ◽  
Mikhail G. Sosnin ◽  
A.V. Duvanskii
Keyword(s):  
Absorption Band ◽  
Boron Content ◽  
Direct Interaction ◽  
High Oxygen ◽  
Metastable States ◽  
Thermal Treatments ◽  
Weak Current ◽  
Oxygen Related Defect ◽  
Related Defect ◽  
Interaction Of Components

In silicon with high oxygen and boron content a new absorption band situated near 1026 cm-1 was found in Si after light illuminSuperscript textation with intensity of 70 mW/cm2. It was shown that both oxygen and boron are the component of the defect to which found band corresponds. It was revealed that defect occurs also during thermal treatments of silicon without illumination when a weak current was applied to the sample upon the treatment. The assumption was made that the formation of defect occurs both as result of direct interaction of components and through intermediate metastable states.

scholarly journals The electrolytic behaviour of thin films. Part I.—Hydrogen

1928 ◽  
Vol 120 (784) ◽  
pp. 59-79 ◽  
Keyword(s):  
Metal Ion ◽  
Active Material ◽  
Atomic Layer ◽  
Surface Concentration ◽  
Hydrogen Ion ◽  
Hydrogen Ions ◽  
Hydrogen Atoms ◽  
Hydrogen Electrode ◽  
Electrode Processes ◽  
A Value

Few investigations have been made on the electrolytic behaviour of very thin metallic films. Whilst the work of Oberbeck and of Pring reveals the fact that a deposited layer of metal but a few atoms thick will produce an electrode possessing all the electromotive properties of the massive metal, yet information is lacking on the alteration of the electromotive force as these layers are built up. It might be anticipated that the behaviour of the electrode during the deposition of the first few layers would lead to interesting results, giving some insight into the mechanism of electrode processes and the range of action of forces of adhesion. In view of this it was considered a matter of some interest to investigate how far it might be possible to obtain data on the electrode potential and the rate of solution of the deposited atoms during the building up of the first atomic layer. The problem of metal ion deposition from aqueous solutions is complicated by the presence of other ions, such as the hydrogen ion, which can deposit simultaneously with the metal and affect the potential. For this reason the deposition of the hydrogen ion was first studied. It is well known that, in general, in order to bring about the continuous deposition of hydrogen ions at a metallic cathode, the potential must be maintained at a value considerably more negative than that of a reversible hydrogen electrode in the same electrolyte. The view most generally accepted is that this overpotential is due to an accumulation of electromotively active material on the electrode, and it has been suggested by various workers that it may consist of metallic hydrides, hydrogen atoms or negative hydrogen ions. With the exception of a paper by Knobel, little work has been done in determining the actual quantity of hydrogen accumulated on the cathode during the establishment of overpotential. Knobel, making the assumptions that the material was atomic hydrogen, that the relation between the solution pressure of the hydrogen P and the surface concentration of atoms C H is given by the relation P = k C H m , and that the potential is related to the pressure by the Nernst expression, calculated this quantity from the rate of growth of overpotential and found that for most metals it was considerably less than an atomic layer.

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