A novel technique for low‐threshold and high‐power InGaAs/GaAs strained‐layer 0.98‐μm buried heterostructure laser fabrication

1992 ◽  
Vol 71 (3) ◽  
pp. 1525-1527 ◽  
Author(s):  
D. C. Liou ◽  
W. H. Chiang ◽  
C. P. Lee ◽  
K. H. Chang ◽  
D. G. Liu ◽  
...  
Keyword(s):  
High Power ◽  
Laser Fabrication ◽  
Strained Layer ◽  
Novel Technique ◽  
Heterostructure Laser ◽  
Buried Heterostructure ◽  
Low Threshold

Low-threshold GaAs/GaAlAs buried heterostructure laser with an ion-beam-etched quarter ring cavity

1987 ◽  
Vol 23 (10) ◽  
pp. 485-487 ◽  
Author(s):  
P. Sansonetti ◽  
H. Riboth ◽  
J. Brandon ◽  
L. Menigaux ◽  
L. Dugrand ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ring Cavity ◽  
Heterostructure Laser ◽  
Buried Heterostructure ◽  
Low Threshold

Low‐threshold disorder‐defined buried heterostructure strained‐layer AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum well lasers (λ∼910 nm)

1989 ◽  
Vol 54 (10) ◽  
pp. 913-915 ◽  
Author(s):  
J. S. Major ◽  
L. J. Guido ◽  
K. C. Hsieh ◽  
N. Holonyak ◽  
W. Stutius ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Strained Layer ◽  
Buried Heterostructure ◽  
Low Threshold

High‐power operation of buried‐heterostructure strained‐layer InGaAs/GaAs single quantum well lasers

1990 ◽  
Vol 57 (26) ◽  
pp. 2762-2763 ◽  
Author(s):  
T. R. Chen ◽  
L. E. Eng ◽  
Y. H. Zhuang ◽  
Y. J. Xu ◽  
H. Zaren ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Strained Layer ◽  
Buried Heterostructure ◽  
High Power Operation ◽  
Power Operation
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