scholarly journals Low threshold current implanted‐planar buried‐heterostructure graded‐index separate confinement heterostructure laser in GaAs/AlGaAs

1990 ◽  
Vol 56 (20) ◽  
pp. 1945-1947 ◽  
Author(s):  
G. Allen Vawter ◽  
D. R. Myers ◽  
Tom M. Brennan ◽  
B. E. Hammons
Keyword(s):  
Threshold Current ◽  
Graded Index ◽  
Heterostructure Laser ◽  
Buried Heterostructure ◽  
Low Threshold

InGaAsP planar buried heterostructure laser diode (PBH-LD) with very low threshold current

1982 ◽  
Vol 18 (1) ◽  
pp. 2 ◽  
Author(s):  
I. Mito ◽  
M. Kitamura ◽  
K. Kaede ◽  
Y. Odagiri ◽  
M. Seki ◽  
...  
Keyword(s):  
Laser Diode ◽  
Threshold Current ◽  
Heterostructure Laser ◽  
Buried Heterostructure ◽  
Low Threshold

Low-threshold GaAs/GaAlAs buried heterostructure laser with an ion-beam-etched quarter ring cavity

1987 ◽  
Vol 23 (10) ◽  
pp. 485-487 ◽  
Author(s):  
P. Sansonetti ◽  
H. Riboth ◽  
J. Brandon ◽  
L. Menigaux ◽  
L. Dugrand ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ring Cavity ◽  
Heterostructure Laser ◽  
Buried Heterostructure ◽  
Low Threshold

Extremely low threshold current density InGaAs/GaAs/AIGaAs strained SQW laser grown by MBE with As2

1996 ◽  
Vol 74 (S1) ◽  
pp. 1-4 ◽  
Author(s):  
M. Dion ◽  
Z. R. Wasilewski ◽  
F. Chatenoud ◽  
V. K. Gupta ◽  
A. R. Pratt ◽  
...  
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Single Quantum Well ◽  
Graded Index ◽  
Quantum Well Laser ◽  
Gaas Barrier ◽  
Low Threshold ◽  
Cladding Layers

In this report, we present data on an InGaAs/GaAs strained single quantum well laser with the lowest reported threshold current density to date, namely 44 A cm−2 for a 3 mm cavity length. This was grown by solid-source molecular-beam epitaxy with the arsenic dimer, As2. The structure is that of a graded-index, separate-confinement heterostructure with a single strained InGaAs quantum well, sandwiched between GaAs barrier layers and AlGaAs cladding layers. The wavelength of the lasers was around 985 nm, and the internal efficiency and losses were 69% and 0.70 cm−1, respectively. In addition, data on the uniformity of our lasers, which are grown on rotating 2 in substrates (1 in = 2.54 cm), show drops in photoluminescence emission wavelength and layer thickness of less than 4 nm and 4%, respectively, from the centre to the edge of the wafer and very little compositional change.

Record low-threshold, single-strained-quantum-well, graded-index, separate-confinement heterostructure laser

1989 ◽  
Vol 25 (3) ◽  
pp. 243 ◽  
Author(s):  
G.A. Vawter ◽  
D.R. Myers ◽  
T.M. Brennan ◽  
B.E. Hammons ◽  
J.P. Hohimer
Keyword(s):  
Quantum Well ◽  
Graded Index ◽  
Heterostructure Laser ◽  
Low Threshold ◽  
Strained Quantum Well
Sign in / Sign up

Export Citation Format

Share Document