A novel technique for GaInAsP/InP buried heterostructure laser fabrication

1982 ◽  
Vol 40 (7) ◽  
pp. 568-570 ◽  
Author(s):  
Z. L. Liau ◽  
J. N. Walpole
Keyword(s):  
Laser Fabrication ◽  
Novel Technique ◽  
Heterostructure Laser ◽  
Buried Heterostructure

A novel technique for low‐threshold and high‐power InGaAs/GaAs strained‐layer 0.98‐μm buried heterostructure laser fabrication

1992 ◽  
Vol 71 (3) ◽  
pp. 1525-1527 ◽  
Author(s):  
D. C. Liou ◽  
W. H. Chiang ◽  
C. P. Lee ◽  
K. H. Chang ◽  
D. G. Liu ◽  
...  
Keyword(s):  
High Power ◽  
Laser Fabrication ◽  
Strained Layer ◽  
Novel Technique ◽  
Heterostructure Laser ◽  
Buried Heterostructure ◽  
Low Threshold

A novel technique to fabricate GaInAsP/InP buried heterostructure laser diodes

1984 ◽  
Vol 44 (10) ◽  
pp. 975-977 ◽  
Author(s):  
K. Imanaka ◽  
H. Horikawa ◽  
Y. Kawai ◽  
M. Sakuta
Keyword(s):  
Laser Diodes ◽  
Novel Technique ◽  
Heterostructure Laser ◽  
Buried Heterostructure

GaAs-based buried heterostructure laser incorporating an InGaP opto-electronic confinement layer

2008 ◽  
Author(s):  
Kristian M. Groom ◽  
Ryan R. Alexander ◽  
David T. D. Childs ◽  
Andrey B. Krysa ◽  
John S. Roberts ◽  
...  
Keyword(s):  
Heterostructure Laser ◽  
Buried Heterostructure
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