Influence of boron doping and hydrogen dilution onp‐type microcrystalline silicon carbide thin films prepared by photochemical vapor deposition

1995 ◽  
Vol 78 (5) ◽  
pp. 3200-3207 ◽  
Author(s):  
Sukriti Ghosh ◽  
Arup Dasgupta ◽  
Swati Ray
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Vapor Deposition ◽  
Boron Doping ◽  
Microcrystalline Silicon ◽  
Hydrogen Dilution ◽  
Photochemical Vapor Deposition

Amorphous-to-Microcrystalline Silicon Transition in Hot-Wire Chemical Vapor Deposition

1995 ◽  
Vol 377 ◽  
Author(s):  
P. Brogueira ◽  
V. Chu ◽  
J. P. Conde
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Microcrystalline Silicon ◽  
Crystalline Fraction ◽  
Hydrogen Dilution ◽  
Process Pressure ◽  
Silicon Growth

ABSTRACTThe conductivity and the structural properties of thin films deposited by Hot-Wire Chemical Vapor Deposition (HW-CVD) from silane and hydrogen at a substrate temperature of 220 °C are shown to be strongly dependent on the filament temperature, Tfil, and process pressure, p. Amorphous silicon films are obtained at low pressures, p < 3 × 10−2Torr, for Tfil ∼ 1900 °C and FH2 = FSiH4. At this TfilJU, high deposition rates are observed, both with and without hydrogen dilution, and no silicon was deposited on the filaments. At Tfil ∼ 1500 °C, a transition from a-Si:H for p > 0.3 Torr to microcrystalline silicon (μc-Si:H) for p < 0.1 Torr occurs. In this temperature regime, silicon growth on the filaments is observed. /ic-Si:H growth both without hydrogen dilution and also in very thin films (∼ 0.05 μm) is achieved. Raman and X-Ray spectra give typical grain sizes of 10 – 20 nm, with a crystalline fraction higher than 50%. For both, Tju ∼ 1500 °C, p > 0.3 Torr and Tfil ∼ 1900 °C and p ∼ 2.7 × 10−2Torr, an increase of the crystalline fraction from 0 to ∼ 30% is observed when the hydrogen dilution, FH2/FSiH4, increases from 1 to > 4.

High Quality Microcrystalline Silicon-Carbide Films Prepared by Photo-CVD Method Using Ethylene Gas as a Carbon Source

1999 ◽  
Vol 557 ◽  
Author(s):  
Seung Yeop Myong ◽  
Hyung Kew Lee ◽  
Euisik Yoon ◽  
Koeng Su Lim
Keyword(s):  
Silicon Carbide ◽  
Vapor Deposition ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Dark Conductivity ◽  
Microcrystalline Silicon ◽  
Cvd Method ◽  
Hydrogen Dilution ◽  
Boron Doped

AbstractHydrogenated boron-doped microcrystalline silicon-carbide (p-μc-SiC:H) films were grown by a photo chemical vapor deposition (photo-CVD) method from silane (SiH4), hydrogen (H2), diborane (B2H6), and ethylene (C2H4) gases. Since the photo-CVD is a mild process (~10mW/cm2), we can avoid the ion damage of the film, which is inevitable during the deposition of μc-SiC:H employing conventional PECVD technique. A dark conductivity as high as 5 × 10-1 S/cm, together with an optical bandgap of 2 eV, was obtained by the C2H4 addition, which is the first approach in photo-CVD systems. From the Raman and FTIR spectra, it is clear that our p-μc-SiC:H films are made up of crystalline silicon grains embedded in amorphous silicon-carbide tissue. We investigate the role of the hydrogen dilution and ethylene addition on the electrical, optical, and structural properties of p-μc-SiC:H films.

Preparation and properties of microcrystalline silicon films using photochemical vapor deposition

1983 ◽  
Vol 59-60 ◽  
pp. 715-718 ◽  
Author(s):  
Tadashi Saitoh ◽  
Toshikazu Shimada ◽  
Masataka Migitaka ◽  
Yasuo Tarui
Keyword(s):  
Vapor Deposition ◽  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Photochemical Vapor Deposition
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