Interfacial Reactions of Titanium Thin Films on P+-Implanted (001)Si

1988 ◽  
Vol 100 ◽  
Author(s):  
M. H. Wan ◽  
W. Lur ◽  
H. C. Cheng ◽  
L. J. Chen
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Phase Formation ◽  
Interfacial Reactions ◽  
Transmission Electron ◽  
Titanium Thin Films ◽  
Ion Implanted

ABSTRACTInterfacial reactions of titanium thin films on P+-implanted silicon have been studied by transmission electron microscopy.The presence of titanium thin films on P+-implanted silicon was found to alter the defect configuration in the recrystallized layer. Interfacial reactions of titanium thin films on silicon were also found to be influenced by the presence of dopants as well as changes in the microstructures of the substrate. The results are compared with those found in previous studies of Ti thin films on ion-implanted silicon as well as on unimplanted samples. The mechanisms for the chaiiges in defect configuration and phase formation are discussed.

In Situ Rheed and Hrem Study of Initial Stages of Interfacial Reactions of Uhv Deposited Titanium Thin Films on Silicon

1991 ◽  
Vol 222 ◽  
Author(s):  
M. H. Wang ◽  
L. J. Chen
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
High Energy ◽  
Interfacial Reactions ◽  
Silicide Formation ◽  
High Energy Electron ◽  
Transmission Electron ◽  
Titanium Thin Films ◽  
Amorphous Interlayer

ABSTRACTThe initial stages of interfacial reactions of ultrahigh vacuum (UHV) deposited Ti thin films on silicon have been studied by in-situ reflected high energy electron diffraction (RHEED) and transmission electron microscopy (TEM).An amorphous interlayer was found to form during the deposition of the first 1.7-nm-thick Ti layer. In samples annealed at 450 °C for 30–120 min, Ti5Si3, located at the Ti/a-interlayer interface, was identified to be the first nucleated phase. Ti5Si3, Ti5Si4, TiSi and C49-TiSi2 were observed in samples annealed at 475 °C for 30 and 60 min as well as at 500 °C for 10 and 20 min. Fundamental issues in silicide formation are discussed in light of the discovery of the formation of the amorphous interlayer and as many as four different silicide phases in the initial stages of interfacial reactions of UHV deposited Ti thin films on silicon.

scholarly journals Transmission electron microscopy investigation of interfacial reactions between SrFeO3 thin films and silicon substrates

2007 ◽  
Vol 22 (1) ◽  
pp. 76-88
Author(s):  
Dashan Wang ◽  
James J. Tunney ◽  
Xiaomei Du ◽  
Michael L. Post ◽  
Raynald Gauvin
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Room Temperature ◽  
Interfacial Reactions ◽  
Silicon Substrates ◽  
Transmission Electron ◽  
Microscopy Investigation ◽  
Microscopy Characterization ◽  
Silicon Diffusion

The SrFeO3/SiO2/Si thin film system has been studied using transmission electron microscopy (TEM). The thin films of SrFeO3 were grown by pulsed laser deposition onto silicon substrates with a SiO2 buffer layer at room temperature (RT) and 700 °C and subjected to annealing for various periods of time at temperature T = 700 °C. Transmission electron microscopy characterization showed that the microstructure of the film deposited at room temperature contained crystalline and amorphous layers. Silicon diffusion into SrFeO3 films occurred at the SiO2 interface for the samples deposited at 700 °C and for those films annealed at 700 °C. The silicon diffusion-induced interfacial reactions resulted in the phase transformations and the growth of complex crystalline and amorphous phases. The principal compositions of these phases were Sr(Fe,Si)12O19, SrOx and amorphous [Sr-Fe-O-Si].

Investigations of Microstructural Changes in Nickel Thin Films on Ionimplanted Silicon by Cross-Sectional Transmission Electron Microscopy with Intermittent Annealings in N2 Ambient

1987 ◽  
Vol 94 ◽  
Author(s):  
S. W. Lu ◽  
C. W. Nieh ◽  
C. S. Chang ◽  
L. J. Chen
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Cross Sectional ◽  
Nickel Thin Films ◽  
Silicon Thin Films ◽  
Transmission Electron ◽  
Induced Defects ◽  
And Diffusion ◽  
Ion Implanted

ABSTRACTThe feasibility of studying dynamical changes in nickel thin films on ion-implanted silicon thin films by cross-sectional transmission electron microscopy (XTEM) with intermittent annealings in N2 ambient up to 850 °C is demonstrated. Interactions of nickel thin films with oxidation induced stacking faults, fluorine bubbles and process-induced defects in ion implanted silicon are provided as examples. The technique may be applied to clarify a number of important issues encountered in the study of the reactions and diffusion of thin films and obtain informations otherwise unattainable.

Transmission Electron Microscopy studies of texture of Cr underlayer of magnetic recording hard disk

1991 ◽  
Vol 49 ◽  
pp. 580-581
Author(s):  
L. Tang ◽  
G. Thomas ◽  
M. R. Khan ◽  
S. L. Duan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Magnetic Recording ◽  
Magnetic Thin Films ◽  
Magnetic Films ◽  
Substrate Bias ◽  
Epitaxial Relationship ◽  
Transmission Electron

Cr thin films are often used as underlayers for Co alloy magnetic thin films, such as Co1, CoNi2, and CoNiCr3, for high density longitudinal magnetic recording. It is belived that the role of the Cr underlayer is to control the growth and texture of the Co alloy magnetic thin films, and, then, to increase the in plane coercivity of the films. Although many epitaxial relationship between the Cr underlayer and the magnetic films, such as ﹛1010﹜Co/ {110﹜Cr4, ﹛2110﹜Co/ ﹛001﹜Cr5, ﹛0002﹜Co/﹛110﹜Cr6, have been suggested and appear to be related to the Cr thickness, the texture of the Cr underlayer itself is still not understood very well. In this study, the texture of a 2000 Å thick Cr underlayer on Nip/Al substrate for thin films of (Co75Ni25)1-xTix dc-sputtered with - 200 V substrate bias is investigated by electron microscopy.

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