Defect formation in the solid phase epitaxial growth of GaAs films on Si (001) substrate

1991 ◽  
Vol 69 (1) ◽  
pp. 237-242 ◽  
Author(s):  
K. I. Cho ◽  
W. K. Choo ◽  
J. Y. Lee ◽  
S. C. Park ◽  
T. Nishinaga
Keyword(s):  
Epitaxial Growth ◽  
Defect Formation ◽  
Solid Phase ◽  
Gaas Films

Solid-Phase Epitaxial Growth of an Alumina Layer Having a Stacking-Mismatched Domain Structure of the Intermediate γ-Phase

2018 ◽  
Vol 10 (48) ◽  
pp. 41487-41496 ◽  
Author(s):  
Jeonghwan Jang ◽  
Seung-Yong Lee ◽  
Hwanyeol Park ◽  
Sangmoon Yoon ◽  
Gyeong-Su Park ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Domain Structure ◽  
Solid Phase ◽  
Alumina Layer

Non-planar solid phase epitaxial growth processes in ion-implanted GaAs

1982 ◽  
Vol 93 (1-2) ◽  
pp. 179-184 ◽  
Author(s):  
J.S. Williams ◽  
F.M. Adams ◽  
K.G. Rossiter
Keyword(s):  
Epitaxial Growth ◽  
Solid Phase ◽  
Growth Processes ◽  
Ion Implanted

New DSPEG Approach to Improvement of SOS Using Low Dose Self-Implantations

1986 ◽  
Vol 74 ◽  
Author(s):  
Eliezer Dovid Richmond ◽  
Alvin R. Knudson ◽  
H. Kawayoshi
Keyword(s):  
Epitaxial Growth ◽  
Low Dose ◽  
Solid Phase ◽  
Silicon Layer ◽  
Amorphous Layer ◽  
New Approach ◽  
Ion Damage ◽  
Defect Elimination

AbstractA new approach is proposed for the material improvement of silicon-on-sapphire (SOS). This approach utilizes the phenomena that the defect elimination throughout the silicon layer depends on both the deep and shallow self-implantations of the double solid phase epitaxial growth (DSPEG) technique for SOS material improvement. The new aspects of this approach are that the deep implantation does not form an amorphous layer, and therefore the ion damage to the substrate is minimized eliminating Al autodoping of the silicon layer.

Epitaxial Growth of SixGe1−x Films on Si by Solid Phase Epitaxy.

1984 ◽  
Vol 37 ◽  
Author(s):  
C. S. Pai ◽  
S. S. Lau
Keyword(s):  
Phase Separation ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Ohmic Contacts ◽  
Solid Phase ◽  
Metal Layer ◽  
Alloyed Layer ◽  
Quaternary Compounds ◽  
Amorphous Si ◽  
Ion Backscattering

AbstractIt has been demonstrated in the literature that amorphous Si (or Ge) can be transported across a metal layer and grown epitaxially on Si(Ge) single crystal substrates in the solid phase. The objective of this study is to investigate if amorphous SixGe1−x mixtures can be transported uniformly across a medium and grown epitaxially on single crystal substrates without phase separation. The samples were prepared by e-beam evaporation of thin Pd films onto Si<100> substrates, followed by co-evaporation of SixGe1−x alloyed films (0<x<1) without breaking vacuum. The samples were anneaie in vacuum at 300°C to form a Pd silicide-germanide layer at the interface, then at 500°C for transport of the alloyed layer across the Pd silicide-germanide layer and subsequent epitaxial growth on Si substrate. The samples were investigated by x-ray diffraction and by MeV ion backscattering and channeling. The results show the alloyed film transports uniformly with no phase separation detected. The channeling result shows the grown alloyed layer is epitaxial with some Pd trapped in the layer. This simple technique is potentially useful for forming lattice-matched non-alloyed ohmic contacts on III–V ternary and quaternary compounds.

Supersaturated solid solutions after solid phase epitaxial growth in Bi‐implanted silicon

1980 ◽  
Vol 37 (2) ◽  
pp. 170-172 ◽  
Author(s):  
S. U. Campisano ◽  
E. Rimini ◽  
P. Baeri ◽  
G. Foti
Keyword(s):  
Epitaxial Growth ◽  
Solid Solutions ◽  
Solid Phase ◽  
Supersaturated Solid Solutions

Solid phase epitaxial growth anisotropy of vacuum-deposited amorphous silicon

1984 ◽  
Vol 82 (2) ◽  
pp. 345-353 ◽  
Author(s):  
I. G. Kaverina ◽  
V. V. Korobtsov ◽  
V. G. Zavodinskii ◽  
A. V. Zotov
Keyword(s):  
Amorphous Silicon ◽  
Epitaxial Growth ◽  
Solid Phase ◽  
Growth Anisotropy

The Effect of Oxide Trenches on Defect Formation and Evolution in Ion-Implanted Silicon

2004 ◽  
Vol 810 ◽  
Author(s):  
Nina Burbure ◽  
Kevin S. Jones
Keyword(s):  
Silicon Oxide ◽  
Defect Formation ◽  
Solid Phase ◽  
Amorphous Layer ◽  
Oxide Interface ◽  
Cross Sectional ◽  
Patterned Wafers ◽  
Edge Defects ◽  
Formation And Evolution ◽  
Spike Anneal

ABSTRACTPattern induced defects during advanced CMOS processing can lead to lower quality devices with high leakage currents. Within this study, the effects of oxide trenches on implant related defect formation and evolution in silicon patterned wafers is examined. Oxide filled trenches approximately 4000Å deep were patterned into 300 mm <100> silicon wafers. Patterning was followed by ion implantation of Si+ at energies ranging from 10 to 80 keV. Samples were amorphized with doses of 1×1015 atoms/cm2, 5×1015 atoms/cm2, and 1×1016 atoms/cm2. Two independent repeating structures were studied. The first structure is comprised of silicon oxide filled trench lines, 3.7μm wide spaced 12.5μm apart, while the second structure contains silicon squares, 0.6μm on a side, surrounded by a silicon oxide filled trench. Cross- sectional and planar view transmission electron microscopy (TEM) samples were used to examine the defect morphology after annealing at temperatures ranging from 700°C to 950°C and at times between 1 second and 1 minute. Following complete regrowth, an array of defects was observed to form near the surface at the silicon/silicon oxide interface. These trench edge defects appeared to nucleate at the amorphous-crystalline interface for all energies and doses studied. Upon a spike anneal at 700°C, it was observed that regrowth of the amorphous layer had completed except in the region near the trench edge. Thus, it is believed that this defect results from the pinning of the amorphous-crystalline interface along the trench edge during solid phase epitaxial regrowth (SPER).

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