Supersaturated solid solutions after solid phase epitaxial growth in Bi‐implanted silicon

1980 ◽  
Vol 37 (2) ◽  
pp. 170-172 ◽  
Author(s):  
S. U. Campisano ◽  
E. Rimini ◽  
P. Baeri ◽  
G. Foti
Keyword(s):  
Epitaxial Growth ◽  
Solid Solutions ◽  
Solid Phase ◽  
Supersaturated Solid Solutions

Metastable Solid Solutions of Impurities in Silicon

1981 ◽  
Vol 7 ◽  
Author(s):  
J. S. Williams ◽  
K. T. Short
Keyword(s):  
High Resolution ◽  
Solid Solutions ◽  
Impurity Concentration ◽  
Rutherford Backscattering ◽  
Equilibrium Solubility ◽  
Furnace Annealing ◽  
Strain Effects ◽  
Crystal Boundary ◽  
Silicon Lattice ◽  
Supersaturated Solid Solutions

ABSTRACTHigh resolution Rutherford backscattering and channeling techniques have been used to investigate the formation and stability of supersaturated solid solutions of As, Sb, In, Pb, Tℓ and Bi implants in (100) silicon. In all cases nearsubstitutional solid solubilities far exceeding maximum equilibrium solubility limits can be achieved by furnace annealing at temperatures ≤ 600°C. Details of the recrystallisation process indicate that the maximum impurity concentration which can be incorporated onto silicon lattice sites may be controlled by impurity size and associated strain effects at the amorphous-crystal boundary during epitaxial regrowth.

Thermodynamical study of (CaGa2S4)x(BaGa2S4)1−x solid solutions

2021 ◽  
pp. 2150469
Author(s):  
T. G. Naghiyev ◽  
R. M. Rzayev
Keyword(s):  
Free Energy ◽  
Solid Solutions ◽  
Calculation Method ◽  
Solid Phase ◽  
Ternary Compounds ◽  
Free Energy Of Formation ◽  
Concentration Dependences ◽  
Solid Phase Reactions ◽  
Two Phases ◽  
Energy Of Formation

The solid solutions of [Formula: see text] were synthesized by solid-phase reactions from powder components of CaS, BaS, and Ga2S3. The temperature-concentration dependences of the Gibbs free energy of formation of [Formula: see text] solid solutions from ternary compounds and phase diagrams of the CaGa2S4–BaGa2S4 were determined by a calculation method. It was revealed that continuous solid solutions are formed in these systems. The spinodal decomposition of [Formula: see text] solid solutions into two phases is predicted at ordinary temperatures.

Solid-Phase Epitaxial Growth of an Alumina Layer Having a Stacking-Mismatched Domain Structure of the Intermediate γ-Phase

2018 ◽  
Vol 10 (48) ◽  
pp. 41487-41496 ◽  
Author(s):  
Jeonghwan Jang ◽  
Seung-Yong Lee ◽  
Hwanyeol Park ◽  
Sangmoon Yoon ◽  
Gyeong-Su Park ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Domain Structure ◽  
Solid Phase ◽  
Alumina Layer

Non-planar solid phase epitaxial growth processes in ion-implanted GaAs

1982 ◽  
Vol 93 (1-2) ◽  
pp. 179-184 ◽  
Author(s):  
J.S. Williams ◽  
F.M. Adams ◽  
K.G. Rossiter
Keyword(s):  
Epitaxial Growth ◽  
Solid Phase ◽  
Growth Processes ◽  
Ion Implanted
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