Structural damage at the Si/SiO2interface resulting from electron injection in metal‐oxide‐semiconductor devices

1985 ◽  
Vol 46 (6) ◽  
pp. 550-552 ◽  
Author(s):  
R. E. Mikawa ◽  
P. M. Lenahan
Keyword(s):  
Metal Oxide ◽  
Structural Damage ◽  
Semiconductor Devices ◽  
Electron Injection ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

Modification of metal-oxide-semiconductor devices by electron injection in high fields

Vacuum ◽  
2002 ◽  
Vol 67 (3-4) ◽  
pp. 617-621 ◽  
Author(s):  
G.G. Bondarenko ◽  
V.V. Andreev ◽  
A.A. Stolyarov ◽  
A.L. Tkachenko
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Electron Injection ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High Fields

Interface state‐induced shift of the oxide and semiconductor core levels for metal–oxide–semiconductor devices

1996 ◽  
Vol 80 (3) ◽  
pp. 1578-1582 ◽  
Author(s):  
H. Kobayashi ◽  
K. Namba ◽  
Y. Yamashita ◽  
Y. Nakato ◽  
T. Komeda ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Interface State ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor
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