Interfacial and Electrical Properties of GaAs Metal-Oxide-Semiconductor Device with TiOxNy High-k Gate Dielectrics

2019 ◽  
Vol 35 (3) ◽  
pp. 325-332 ◽  
Author(s):  
T. Das ◽  
Chandreswar Mahata ◽  
G Sutradhar ◽  
P K Bose ◽  
C.K. Maiti
Keyword(s):  
Electrical Properties ◽  
Metal Oxide ◽  
Semiconductor Device ◽  
Gate Dielectrics ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High K

Electrical properties of La2O3 and HfO2∕La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices

2008 ◽  
Vol 103 (1) ◽  
pp. 014506 ◽  
Author(s):  
G. Mavrou ◽  
S. Galata ◽  
P. Tsipas ◽  
A. Sotiropoulos ◽  
Y. Panayiotatos ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Metal Oxide ◽  
Gate Dielectrics ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

Physical origin of dipole formation at high-k/SiO2 interface in metal-oxide-semiconductor device with high-k/metal gate structure

2010 ◽  
Vol 96 (15) ◽  
pp. 152907 ◽  
Author(s):  
Xiaolei Wang ◽  
Kai Han ◽  
Wenwu Wang ◽  
Shijie Chen ◽  
Xueli Ma ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Device ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Physical Origin ◽  
Metal Gate ◽  
Gate Structure ◽  
High K
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