AlGaAs/GaAs double‐heterojunction high electron mobility transistors grown by low‐pressure organometallic vapor phase epitaxy

1990 ◽  
Vol 67 (1) ◽  
pp. 550-552 ◽  
Author(s):  
Rong‐Ting Huang ◽  
Yung‐Yi Tu ◽  
Dumrong Kasemset ◽  
N. Nouri ◽  
C. Colvard ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Low Pressure ◽  
Vapor Phase Epitaxy ◽  
High Electron ◽  
Organometallic Vapor Phase Epitaxy ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Double Heterojunction

Hydride vapor phase epitaxy-grown AlGaN/GaN high electron mobility transistors

2003 ◽  
Vol 47 (6) ◽  
pp. 1075-1079 ◽  
Author(s):  
M.A. Mastro ◽  
D. Tsvetkov ◽  
V. Soukhoveev ◽  
A. Usikov ◽  
V. Dmitriev ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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