Mechanism of increase in charge-pumping current of metal-nitride-oxide-silicon-field effect transistors during thick dielectric film etching using fluorocarbon gas plasma

Yoshinari Ichihashi; Yasushi Ishikawa; Ryu Shimizu; Seiji Samukawa

doi:10.1116/1.3456177

Mechanism of increase in charge-pumping current of metal-nitride-oxide-silicon-field effect transistors during thick dielectric film etching using fluorocarbon gas plasma

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3456177 ◽

2010 ◽

Vol 28 (4) ◽

pp. 829-833 ◽

Cited By ~ 3

Author(s):

Yoshinari Ichihashi ◽

Yasushi Ishikawa ◽

Ryu Shimizu ◽

Seiji Samukawa

Keyword(s):

Field Effect ◽

Dielectric Film ◽

Field Effect Transistors ◽

Metal Nitride ◽

Charge Pumping ◽

Gas Plasma ◽

Nitride Oxide

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IEEE Standard Definitions, Symbols, and Characterization of Metal-Nitride-Oxide Field-Effect Transistors

10.1109/ieeestd.1978.81706 ◽

1976 ◽

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Nitride ◽

Ieee Standard ◽

Nitride Oxide

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Metal-nitride-oxide-silicon field-effect transistors, with self-aligned gates

Solid-State Electronics ◽

10.1016/0038-1101(68)90067-1 ◽

1968 ◽

Vol 11 (7) ◽

pp. 653-660 ◽

Cited By ~ 38

Author(s):

J.C. Sarace ◽

R.E. Kerwin ◽

D.L. Klein ◽

R. Edwards

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Nitride ◽

Nitride Oxide

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Investigation of extra traps measured by charge pumping technique in high voltage zone in p-channel metal-oxide-semiconductor field-effect transistors with HfO2/metal gate stacks

Applied Physics Letters ◽

10.1063/1.4773914 ◽

2013 ◽

Vol 102 (1) ◽

pp. 012106 ◽

Cited By ~ 4

Author(s):

Szu-Han Ho ◽

Ting-Chang Chang ◽

Bin-Wei Wang ◽

Ying-Shin Lu ◽

Wen-Hung Lo ◽

...

Keyword(s):

Metal Oxide ◽

High Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Metal Gate ◽

Charge Pumping

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Correlation between Charge Pumping Method and Direct-Current Current Voltage Method in p-Type Metal-Oxide-Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.4696 ◽

1999 ◽

Vol 38 (Part 1, No. 8) ◽

pp. 4696-4698 ◽

Cited By ~ 6

Author(s):

Bin-Bin Jie ◽

Kok-Hooi Ng ◽

Ming-Fu Li ◽

Keng-Foo Lo

Keyword(s):

Metal Oxide ◽

Direct Current ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Charge Pumping ◽

Current Voltage ◽

P Type

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Multi-frequency inversion-charge pumping for charge separation and mobility analysis in high-k/InGaAs metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.4936313 ◽

2015 ◽

Vol 118 (20) ◽

pp. 204107 ◽

Cited By ~ 2

Author(s):

V. Djara ◽

K. Cherkaoui ◽

M. A. Negara ◽

P. K. Hurley

Keyword(s):

Metal Oxide ◽

Charge Separation ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Mobility Analysis ◽

Charge Pumping ◽

High K ◽

Inversion Charge

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Efficient combination of Roll-to-Roll compatible techniques towards the large area deposition of a polymer dielectric film and the solution-processing of an organic semiconductor for the field-effect transistors fabrication on plastic substrate

Organic Electronics ◽

10.1016/j.orgel.2019.06.010 ◽

2019 ◽

Vol 73 ◽

pp. 231-239 ◽

Cited By ~ 6

Author(s):

Christina Koutsiaki ◽

Tryfon Kaimakamis ◽

Alexandros Zachariadis ◽

Alexis Papamichail ◽

Christina Kamaraki ◽

...

Keyword(s):

Organic Semiconductor ◽

Field Effect ◽

Dielectric Film ◽

Field Effect Transistors ◽

Plastic Substrate ◽

Solution Processing ◽

Large Area ◽

Polymer Dielectric ◽

Roll To Roll ◽

Area Deposition

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Trap evaluations of metal/oxide/silicon field-effect transistors with high-k gate dielectric using charge pumping method

Applied Physics Letters ◽

10.1063/1.1506776 ◽

2002 ◽

Vol 81 (11) ◽

pp. 2050-2052 ◽

Cited By ~ 21

Author(s):

Ga-Won Lee ◽

Jae-Hee Lee ◽

Hae-Wang Lee ◽

Myoung-Kyu Park ◽

Dae-Gwan Kang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Charge Pumping ◽

High K ◽

Metal Oxide Silicon ◽

High K Gate Dielectric

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Charge pumping measurements on stepped‐gate metal‐nitride‐oxide‐silicon memory transistors

Journal of Applied Physics ◽

10.1063/1.330021 ◽

1982 ◽

Vol 53 (10) ◽

pp. 7106-7108 ◽

Cited By ~ 8

Author(s):

H. E. Maes ◽

S. H. Usmani

Keyword(s):

Metal Nitride ◽

Charge Pumping ◽

Nitride Oxide

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Comparison of MOS and Metal-Nitride-Semiconductor Insulated Gate Field-Effect Transistors under Electron Irradiation

IEEE Transactions on Nuclear Science ◽

10.1109/tns.1996.4324368 ◽

1966 ◽

Vol 13 (6) ◽

pp. 248-254 ◽

Cited By ~ 17

Author(s):

Alan G. Stanley

Keyword(s):

Electron Irradiation ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Nitride ◽

Nitride Semiconductor

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Suppression of Geometric Component of Charge Pumping Current in Thin Film Silicon on Insulator Metal-Oxide-Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.l855 ◽

1998 ◽

Vol 37 (Part 2, No. 7B) ◽

pp. L855-L858 ◽

Cited By ~ 8

Author(s):

Tran Ngoc Duyet ◽

Hiroki Ishikuro ◽

Makoto Takamiya ◽

Takuya Saraya ◽

Toshiro Hiramoto

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Charge Pumping ◽

Thin Film Silicon

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