Study of the substrate bias in plasma depositions using an electron cyclotron resonance plasma

K. Shirai; S. Gonda

doi:10.1063/1.346217

Study of the substrate bias in plasma depositions using an electron cyclotron resonance plasma

Journal of Applied Physics ◽

10.1063/1.346217 ◽

1990 ◽

Vol 68 (8) ◽

pp. 4258-4267 ◽

Cited By ~ 8

Author(s):

K. Shirai ◽

S. Gonda

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Substrate Bias ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Pulse‐time‐modulated electron cyclotron resonance plasma etching with low radio‐frequency substrate bias

Applied Physics Letters ◽

10.1063/1.116071 ◽

1996 ◽

Vol 68 (3) ◽

pp. 316-318 ◽

Cited By ~ 41

Author(s):

Seiji Samukawa

Keyword(s):

Radio Frequency ◽

Plasma Etching ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Substrate Bias ◽

Pulse Time ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Effect of substrate bias voltage under growth on characteristics of InN films grown by molecular-beam epitaxy assisted by electron cyclotron resonance plasma

physica status solidi (c) ◽

10.1002/pssc.200303454 ◽

2003 ◽

Vol 0 (7) ◽

pp. 2545-2548 ◽

Cited By ~ 2

Author(s):

H. Yona ◽

Y. Harada ◽

T. Yodo

Keyword(s):

Molecular Beam Epitaxy ◽

Bias Voltage ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Substrate Bias ◽

Electron Cyclotron Resonance Plasma ◽

Substrate Bias Voltage ◽

Resonance Plasma

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The effects of substrate bias on plasma parameters in an electron cyclotron resonance plasma reactor

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.577181 ◽

1991 ◽

Vol 9 (6) ◽

pp. 3113-3118 ◽

Cited By ~ 12

Author(s):

John B. O. Caughman ◽

William M. Holber

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Plasma Reactor ◽

Electron Cyclotron ◽

Substrate Bias ◽

Plasma Parameters ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Improvements of electrical and optical properties of GaAs by substrate bias application during electron‐cyclotron‐resonance plasma‐excited molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.101094 ◽

1989 ◽

Vol 54 (24) ◽

pp. 2419-2421 ◽

Cited By ~ 9

Author(s):

Naoto Kondo ◽

Yasushi Nanishi

Keyword(s):

Optical Properties ◽

Molecular Beam Epitaxy ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Substrate Bias ◽

Electrical And Optical Properties ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Electron cyclotron resonance plasma deposition of silicon nitride: Effect of very low rf substrate bias

Applied Physics Letters ◽

10.1063/1.106921 ◽

1992 ◽

Vol 60 (21) ◽

pp. 2601-2603 ◽

Cited By ~ 11

Author(s):

K. A. Buckle ◽

J. Rodgers ◽

K. Pastor ◽

C. Constantine ◽

D. Johnson

Keyword(s):

Silicon Nitride ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Plasma Deposition ◽

Electron Cyclotron ◽

Substrate Bias ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Effects of substrate bias frequency in an electron cyclotron resonance plasma reactor

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.578665 ◽

1993 ◽

Vol 11 (6) ◽

pp. 2897-2902 ◽

Cited By ~ 2

Author(s):

J. B. O. Caughman ◽

W. M. Holber

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Plasma Reactor ◽

Electron Cyclotron ◽

Substrate Bias ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Electron cyclotron resonance plasma etching of InP in CH4/H2/Ar

Applied Physics Letters ◽

10.1063/1.102487 ◽

1990 ◽

Vol 56 (15) ◽

pp. 1424-1426 ◽

Cited By ~ 52

Author(s):

S. J. Pearton ◽

U. K. Chakrabarti ◽

A. P. Kinsella ◽

D. Johnson ◽

C. Constantine

Keyword(s):

Plasma Etching ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Effect of nitrogen flow on the properties of carbon nitride films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition

Vacuum ◽

10.1016/j.vacuum.2021.110223 ◽

2021 ◽

pp. 110223

Author(s):

Sixu Lin ◽

Dong Xie ◽

Yongliang Tang ◽

Yiwen Wang ◽

Fengjuan Jing ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Carbon Nitride ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Nitrogen Flow ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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X-ray photoelectron diffraction observation of β-SiC(001) obtained by electron cyclotron resonance plasma assisted growth on Si(001)

Applied Surface Science ◽

10.1016/0169-4332(93)90239-8 ◽

1993 ◽

Vol 68 (4) ◽

pp. 575-582 ◽

Cited By ~ 20

Author(s):

M. Diani ◽

J.L. Bischoff ◽

L. Kubler ◽

D. Bolmont

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

X Ray ◽

Photoelectron Diffraction ◽

Resonance Plasma

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Low-temperature deposition of high-quality silicon dioxide films by sputtering-type electron cyclotron resonance plasma

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.580664 ◽

1997 ◽

Vol 15 (4) ◽

pp. 1951-1954 ◽

Cited By ~ 20

Author(s):

H. Nakashima ◽

K. Furukawa ◽

Y. C. Liu ◽

D. W. Gao ◽

Y. Kashiwazaki ◽

...

Keyword(s):

Low Temperature ◽

Silicon Dioxide ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

High Quality ◽

Electron Cyclotron Resonance Plasma ◽

Low Temperature Deposition ◽

Temperature Deposition ◽

Resonance Plasma

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