Improvements of electrical and optical properties of GaAs by substrate bias application during electron‐cyclotron‐resonance plasma‐excited molecular beam epitaxy

1989 ◽  
Vol 54 (24) ◽  
pp. 2419-2421 ◽  
Author(s):  
Naoto Kondo ◽  
Yasushi Nanishi
Sign in / Sign up

Export Citation Format

Share Document