Thermoelectric power of annealed β‐Ag2Se alloy thin films: Temperature and size effects—possibility of a new (β2) phase at low temperatures

1990 ◽  
Vol 67 (2) ◽  
pp. 878-883 ◽  
Author(s):  
V. Damodara Das ◽  
D. Karunakaran
Keyword(s):  
Thin Films ◽  
Thermoelectric Power ◽  
Size Effects ◽  
Low Temperatures

Thermoelectric power of Se20Te80 alloy thin films: Temperature and size effects

1989 ◽  
Vol 172 (2) ◽  
pp. 167-177 ◽  
Author(s):  
V.Damodara Das ◽  
P.Jansi Lakshmi
Keyword(s):  
Thin Films ◽  
Thermoelectric Power ◽  
Size Effects

Thermoelectric power of oriented thin-film organic conductors

RSC Advances ◽  
2016 ◽  
Vol 6 (47) ◽  
pp. 41040-41044 ◽  
Author(s):  
Ryonosuke Sato ◽  
Yasuhiro Kiyota ◽  
Tomofumi Kadoya ◽  
Tadashi Kawamoto ◽  
Takehiko Mori
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Temperature Dependence ◽  
Thermoelectric Power ◽  
Low Temperatures ◽  
Organic Conductors

The temperature dependence of thermoelectric power is investigated down to low temperatures for oriented thin films of organic conductors.

ANOMALOUS MAGNETIZATION PROCESSES AT LOW TEMPERATURES IN COMPOSITIONALLY MODULATED Co/Mn THIN FILMS

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-1753-C8-1754
Author(s):  
H. Sakakima ◽  
M. Tessier ◽  
R. Krishnan ◽  
E. Hirota
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
Magnetization Processes

scholarly journals High thermoelectric power factor of pure and vanadium-alloyed chromium nitride thin films

2021 ◽  
pp. 102493
Author(s):  
M.A. Gharavi ◽  
D. Gambino ◽  
A. le Febvrier ◽  
F. Eriksson ◽  
R. Armiento ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Power ◽  
Power Factor ◽  
Chromium Nitride ◽  
Thermoelectric Power Factor

scholarly journals Structural defects in ZnO thin films grown by atomic layer deposition at low temperatures

2021 ◽  
Vol 27 (S1) ◽  
pp. 2660-2662
Author(s):  
David Elam ◽  
Eduardo Ortega ◽  
Andrey Chabanov ◽  
Arturo Ponce
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Low Temperatures ◽  
Atomic Layer ◽  
Structural Defects ◽  
Zno Thin Films ◽  
Layer Deposition

Retention of Surface Structure Causes Lower Density in Atomic Layer Deposition of Amorphous Titanium Oxide Thin Films

2021 ◽  
Author(s):  
Benjamin Rich ◽  
Yael Etinger-Geller ◽  
G. Ciatto ◽  
A Katsman ◽  
Boaz Pokroy
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Surface Structure ◽  
Titanium Oxide ◽  
Size Effects ◽  
Atomic Layer ◽  
Tio2 Films ◽  
Structural Modifications ◽  
Layer Deposition ◽  
Amorphous Tio2

Size effects and structural modifications in amorphous TiO2 films deposited by atomic layer deposition (ALD) were investigated. As with the previously investigated ALD-deposited Al2O3 system we found that the film’s...

Hydrothermal synthesis of heteroepitaxial Pb(ZrxTi1−x)O3 thin films at 90–150 °C

1997 ◽  
Vol 12 (5) ◽  
pp. 1176-1178 ◽  
Author(s):  
A. T. Chien ◽  
J. S. Speck ◽  
F. F. Lange
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
High Dielectric Constant ◽  
Ambient Pressure ◽  
Random Access ◽  
Random Access Memory ◽  
Molar Ratio ◽  
Access Memory ◽  
Eds Analysis ◽  
High Dielectric

Pb(ZrxTi1−x)O3 and PbZrO3 heteroepitaxial thin films were produced in an aqueous solution (10 M KOH) at ambient pressure and low temperatures (90–150 °C) on (001) SrTiO3 and LaAlO3 single crystal substrates. Growth of the Pb(ZrxTi1−x)O3 and PbZrO3 thin films initiates by the formation of {100} faceted islands. Energy dispersive spectroscopy (EDS) analysis of the Pb(ZrxTi1−x)O3 thin film shows that the Zr: Ti ratio is 45: 56, nearly identical to the molar ratio of the precursors. This route might provide a viable low temperature alternative for the formation of high dielectric constant thin films for applications such as dynamic random access memory (DRAM).

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