Temperature and size effects on electrical properties and thermoelectric power of Bismuth Telluride thin films deposited by co-sputtering

2013 ◽  
Vol 268 ◽  
pp. 472-476 ◽  
Author(s):  
Zhigang Zeng ◽  
Penghui Yang ◽  
Zhiyu Hu
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Thermoelectric Power ◽  
Bismuth Telluride ◽  
Size Effects

Phase evolution and electrical properties of Co–Sb alloys fabricated from Co/Sb bilayers by thermal annealing and ion beam mixing

2015 ◽  
Vol 17 (37) ◽  
pp. 24427-24437 ◽  
Author(s):  
Manju Bala ◽  
Compesh pannu ◽  
Srashti Gupta ◽  
Tripurari S. Tripathi ◽  
Surya K. Tripathi ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Thermoelectric Power ◽  
Thermal Annealing ◽  
Ion Beam ◽  
Phase Evolution ◽  
Ion Beam Mixing ◽  
Power Enhancement

Thermoelectric power enhancement of ion beam synthesized Co–Sb alloy thin films.

Thermoelectric power of Se20Te80 alloy thin films: Temperature and size effects

1989 ◽  
Vol 172 (2) ◽  
pp. 167-177 ◽  
Author(s):  
V.Damodara Das ◽  
P.Jansi Lakshmi
Keyword(s):  
Thin Films ◽  
Thermoelectric Power ◽  
Size Effects

Electrical Properties of rf Sputtered Bismuth Telluride Thin Films

1973 ◽  
Vol 10 (2) ◽  
pp. 391-392 ◽  
Author(s):  
M. J. McCulley ◽  
G. W. Neudeck ◽  
G. L. Liedl
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Bismuth Telluride

Thermoelectric Micro-Cooler of Bismuth Telluride Thin Films

2007 ◽  
Author(s):  
Koji Miyazaki ◽  
Jun-Ichiro Kurosaki ◽  
Masayuki Takashiri ◽  
Bertrand Lenoir ◽  
Hiroshi Tsukamoto
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Thermoelectric Power ◽  
Bismuth Telluride ◽  
Figure Of Merit ◽  
Flash Evaporation ◽  
3Ω Method ◽  
Fine Powders ◽  
P Type

In this study, we fabricated bismuth-telluride thin films and their in-plane thermoelectric micro-coolers (4mm×4mm) by using the flash evaporation method. We prepared fine powders of Bi2.0Te2.7Se0.3 (n-type) and Bi0.4Te3.0Sb1.6 (p-type). The thermoelectric properties of as-grown thin films are lower than those of bulk materials. Therefore the as-grown thin films were annealed in hydrogen at atmospheric pressure for 1 hour in a temperature range of 200 to 400°C. By optimizing the annealing temperature, thin films with high thermoelectric power factors of 8.8 μW/(cm·K2) in n-type and 13.8 μW/(cm·K2) in p-type are obtained. To evaluate the figure of merit of the thin film, the thermal conductivity of the n-type thin film is measured by the 3ω method. The thin film annealed at 200 °C exhibited a cross-plane thermal conductivity of 1.2 W/(m·K). Micro-coolers of flash-evaporated bismuth-telluride thin films are fabricated using three shadow masks. The shadow masks are prepared by standard micro-fabrication processes such as nitridation of Si, dry etching, and wet etching. Thermoelectric power of the as-grown thin film devices with 16 pairs of p-n legs are measured by YAG laser heating at the center of the devices. The thermoelectric power of thermoelectric legs is evaluated to be 180μV/K per one p-n leg pair. According to the Kelvin’s law, it corresponds to 54mV Peltier coefficient per p-n pair.

scholarly journals Effect of Annealing Temperature on The Some Electrical Properties of InSb:Bi Thin Films

2010 ◽  
Vol 7 (4) ◽  
pp. 1416-1420
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Thermoelectric Power ◽  
Carrier Concentration ◽  
Glass Substrate ◽  
Annealing Temperature ◽  
Thermal Evaporation ◽  
Thermal Evaporation Technique ◽  
Evaporation Technique

InSb alloy was prepared then InSb:Bi films have been prepared successfully by thermal evaporation technique on glass substrate at Ts=423K. The variation of activation energies(Ea1,Ea2)of d.c conductivity with annealing temperature (303, 373, 423, 473, 523 and 573)K were measured, it is found that its values increases with increasing annealing temperature. To show the type of the films, the Hall and thermoelectric power were measured. The activation energy of the thermoelectric power is much smaller than for d.c conductivity and increases with increasing annealing temperature .The mobility and carrier concentration has been measured also.

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