Thermoelectric power of oriented thin-film organic conductors

RSC Advances ◽  
2016 ◽  
Vol 6 (47) ◽  
pp. 41040-41044 ◽  
Author(s):  
Ryonosuke Sato ◽  
Yasuhiro Kiyota ◽  
Tomofumi Kadoya ◽  
Tadashi Kawamoto ◽  
Takehiko Mori
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Temperature Dependence ◽  
Thermoelectric Power ◽  
Low Temperatures ◽  
Organic Conductors

The temperature dependence of thermoelectric power is investigated down to low temperatures for oriented thin films of organic conductors.

Transport Properties of Granular Nix(SiO2)100−x Thin Films

1990 ◽  
Vol 195 ◽  
Author(s):  
John R. Beamish ◽  
B.M. Patterson ◽  
K.M. Unruh
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Electrical Transport ◽  
Low Temperatures ◽  
Room Temperature ◽  
Volume Percent ◽  
Ni Content ◽  
Resistivity Minimum ◽  
Temperature Coefficient Of Resistivity ◽  
Sputter Deposited

ABSTRACTWe have studied the electrical transport behavior of sputter deposited Nix(SiO2)100−x thin films between room temperature and 100 mK and, at selected temperatures, in applied magnetic fields up to 6 T. As the Ni concentration x is reduced, the resistivity increases systematically. At a Ni concentration (nominal) of about x–70 atomic percent (38 volume percent) the room temperature coefficient of resistivity changes sign. For Ni concentrations greater than 70 percent the resistance first decreases with temperature then increases logarithmically at, low temperatures. This increase becomes smaller and the resistivity minimum moves to progressively lower temperatures as the Ni concentration increases. In films with less than x–70 percent Ni, the resistivity has a temperature dependence of the form ρ(T)–ρo exp \(To/T)α] between room temperature and about 5 K. The exponent a is about 1/2 and To increases with decreasing Ni content. Below 1 K, however, the resistivity increases much less rapidly, with a temperature dependence independent of Ni concentration. In all films the magnetoresistance is small and negative.

Temperature Dependence of Thermal Conductivity of Amorphous and Crystal Thin Film by Molecular Dynamics Simulation

2007 ◽  
Author(s):  
Zhengxing Huang ◽  
Zhenan Tang ◽  
Suyuan Bai ◽  
Jun Yu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Integrated Circuits ◽  
Temperature Dependence ◽  
Amorphous Materials ◽  
Dynamics Simulation ◽  
Amorphous Sio2 ◽  
Film Boundary ◽  
Different Temperatures

For crystal materials, thermal conductivity (TC) is proportional to T3 at low temperatures and to T−1 at high temperatures. TCs of most amorphous materials decrease with the decreasing temperatures. If a material is thin film, boundary will influence the TC and then influence the temperature dependence. In this paper, we calculate the TC of crystal and amorphous SiO2 thin films, which is a commonly used material in micro devices and Integrated Circuits, by NEMD simulations. The calculation temperatures are from 100K to 700K and the thicknesses are from 2nm to 8nm. TCs of crystal thin films reach their peak values at different temperatures for different thicknesses. The smaller thickness the larger peak values obtained. But for amorphous thin films, the results show that the temperature dependence of thin films is the same as bulk materials and not relative to their thicknesses. The obtained temperature dependence of the thin films is consistent with some previous measurements and the theory predictions.

Magnetic Penetration Depth Measurements and Inhomogeneity in YBa2Cu3O7−δ Superconducting Thin Films

1990 ◽  
Vol 195 ◽  
Author(s):  
Steven M. Anlage ◽  
Brian W. Langley ◽  
Jurgen Halbritter ◽  
Chang-Beom Eom ◽  
Neil Switz ◽  
...  
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Penetration Depth ◽  
Exponential Decay ◽  
Power Law ◽  
Low Temperatures ◽  
Bcs Theory ◽  
Magnetic Penetration Depth ◽  
Microstrip Resonator ◽  
Magnetic Penetration

ABSTRACTThe microstrip resonator technique has been applied to study the temperature dependence of the magnetic penetration depth in high quality YBa2Cu3O7−δ thin films. The temperature dependence at low temperatures comes out directly from measured data, with no assumptions about transmission line geometry, dielectric properties, or a model for the temperature dependence of the penetration depth. One can interpret the data in terms of either an exponential decay of λ(T) at low temperatures or as a power law decay. The energy gaps obtained from the exponential decay at low temperature are found to be significantly smaller than weak coupled BCS theory and power-law exponents are in the range of 1.3 to 3.2. These results will be discussed in terms of microscopic theories and the possibility that materials properties dominate the measurement.

Thermoelectric power of tellurium thin films and its thickness and temperature dependence

1981 ◽  
Vol 16 (12) ◽  
pp. 3331-3334 ◽  
Author(s):  
V. Damodara Das ◽  
N. Jayaprakash ◽  
N. Soundararajan
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Thermoelectric Power

Transformations in Thin Solid Layers: The Reversible Polymerization-Depolymerization of 2,6-Di-n-propyl- 1,3,5,7-tetraoxa-2,6-dibora-4,8-octalindiones at Low Temperatures

1985 ◽  
Vol 40 (2) ◽  
pp. 222-228 ◽  
Author(s):  
Mohamed Yalpani ◽  
E. Klotzbücher
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Title Compound ◽  
Low Temperatures ◽  
Three Dimensional ◽  
Visible Spectroscopy ◽  
Varying Thickness ◽  
Spontaneous Formation ◽  
Uv Visible ◽  
Lattice Energies

The course of Aggregation of molecules of the title compound (1b) through different, spectroscopically discernible and chemically identifiable forms of associations could be followed by matrix isolation and thin film infrared and UV-visible spectroscopy. It was found that molecules of 1b in thin films form clusters which at low temperatures interact weakly, probably through the carbonyl oxygens of one and the boron atoms of the neighbouring molecules. On warming to 260 K this association gradually takes the form of more defined chelate bonds, probably with ordered three-dimensional intermolecular structures. Above this temperature spontaneous formation of crystallites of the previously reported ʻhotʼ and ʻcoldʼ modifications was observed. Studies with films of varying thickness indicate an interdependence of crystallite size and lattice energies.

Substantiation of a Technique of Determining Stress in Thin Films at Very Low Temperatures

2015 ◽  
Vol 14 ◽  
pp. 28-36
Author(s):  
C.C. Chama
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperatures ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
High Temperature Stress ◽  
Hysteresis Curves ◽  
Stress Hysteresis

Substantiation of a technique earlier employed in determining stress in Copper-Silver thin films at very low temperatures is presented. It is shown that the stress measured at elevated temperatures using Stoney’s equation can be utilized in the determination of stress at very low temperatures. To demonstrate the application of this technique, a case study has been conducted by utilizing stress hysteresis curves obtained from the Cu-6at%Ag thin film heated from room temperature to 400°C and cooled back to room temperature in two cycles. The stresses in the Cu-6at%Ag thin film at various low temperatures up to-197°C have been determined by utilizing data from high temperature stress hysteresis curves.

In Situ FT-IR Studies of Oxide and Oxynitride Sol-Gel-Derived Thin Films

1984 ◽  
Vol 32 ◽  
Author(s):  
David M. Haaland ◽  
C. Jeffrey Brinker
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
High Temperature ◽  
Low Temperatures ◽  
Sol Gel ◽  
Ir Studies ◽  
Oxynitride Glass ◽  
Vibrational Bands ◽  
Ft Ir

ABSTRACTA high-temperature infrared cell was developed to study the gel-to-glass conversion of sol-gel-derived thin films. FT-IR spectra of matched thin-film borosilicate sol-gel samples were taken as the samples were heated at 100°C intervals to 700°C in either air or ammonia. The gels were converted to oxide and oxynitride glasses, respectively, by these heat treatments. The gel-to-glass conversion could be followed and compared for these two treatments by monitoring changes in the vibrational bands present in the spectra. Comparisons between the infrared spectra of NH3-treated and air-treated films heated above 500°C reveal the appearance of new B-N bonds at the expense of B-O-Si bonds for the NH3-fired films. These spectra also exhibit changes which may indicate the formation of Si-N bonds. Thus, ammonolysis reactions can result in thin-film oxynitride glass formation at relatively low temperatures.

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