Thermoelectric power and electrical resistivity of crystalline antimony telluride (Sb2Te3) thin films: Temperature and size effects

1989 ◽  
Vol 65 (6) ◽  
pp. 2332-2341 ◽  
Author(s):  
V. Damodara Das ◽  
N. Soundararajan
1989 ◽  
Vol 172 (2) ◽  
pp. 167-177 ◽  
Author(s):  
V.Damodara Das ◽  
P.Jansi Lakshmi

2015 ◽  
Vol 7 (8) ◽  
pp. 1594-1598 ◽  
Author(s):  
Won-Yong Lee ◽  
No-Won Park ◽  
Dong-Joo Kim ◽  
Soon-Gil Yoon ◽  
Jung-Hyuk Koh ◽  
...  

Sb-Se thin films of varying composition have been deposited on glass substrates at room temperature. These films were annealed at temperature interval of 50 0K. The electrical resistivity (ρ) and thermoelectric power (α) of same films were measured. The resistance of semiconducting films decreases rapidly on heating showing negative temperature coefficient of resistance (T.C.R.). The composition dependent resistivity shows exponential change, sharp fall of resistivity may be attributed due to increase of metallic ‘Sb’ in Sb-Se thin films. The composition dependent activation energy of Sb-Se thin films has been calculated. The activation energy (∆E) of semiconducting films was found to increase with selenium concentration. For different compositions thermoelectric power (α) increases upto 70 at. wt.% of Se concentration and then slowly decreases. The I-V characteristics of Sb-Se thin films were measured using copper (Cu) contacts. The films show ohmic conduction for different applied voltages as well as various concentrations of Selenium (Se) in Sb-Se thin films


Sign in / Sign up

Export Citation Format

Share Document