Radiation‐induced charge neutralization and interface‐trap buildup in metal‐oxide‐semiconductor devices

D. M. Fleetwood

doi:10.1063/1.345199

Radiation‐induced charge neutralization and interface‐trap buildup in metal‐oxide‐semiconductor devices

Journal of Applied Physics ◽

10.1063/1.345199 ◽

1990 ◽

Vol 67 (1) ◽

pp. 580-583 ◽

Cited By ~ 93

Author(s):

D. M. Fleetwood

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Trap ◽

Charge Neutralization ◽

Radiation Induced ◽

Induced Charge

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Time dependence of radiation‐induced interface trap formation in metal‐oxide‐semiconductor devices as a function of oxide thickness and applied field

Journal of Applied Physics ◽

10.1063/1.349226 ◽

1991 ◽

Vol 70 (7) ◽

pp. 3734-3747 ◽

Cited By ~ 119

Author(s):

D. B. Brown ◽

N. S. Saks

Keyword(s):

Metal Oxide ◽

Time Dependence ◽

Applied Field ◽

Semiconductor Devices ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Trap ◽

Trap Formation ◽

Radiation Induced

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Effect of post‐oxidation anneal temperature on radiation‐induced charge trapping in metal‐oxide‐semiconductor devices

Applied Physics Letters ◽

10.1063/1.99828 ◽

1988 ◽

Vol 53 (9) ◽

pp. 770-772 ◽

Cited By ~ 67

Author(s):

J. R. Schwank ◽

D. M. Fleetwood

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Charge Trapping ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Radiation Induced ◽

Induced Charge ◽

Anneal Temperature

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Theory of near-interface trap quenching by impurities in SiC-based metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.4798536 ◽

2013 ◽

Vol 102 (12) ◽

pp. 123505 ◽

Cited By ~ 6

Author(s):

B. R. Tuttle ◽

X. Shen ◽

S. T. Pantelides

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Trap

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Correlation between preirradiation channel mobility and radiation‐induced interface‐trap charge in metal‐oxide‐semiconductor transistors

Applied Physics Letters ◽

10.1063/1.104760 ◽

1991 ◽

Vol 58 (24) ◽

pp. 2782-2784 ◽

Cited By ~ 29

Author(s):

John H. Scofield ◽

M. Trawick ◽

P. Klimecky ◽

D. M. Fleetwood

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Trap ◽

Trap Charge ◽

Channel Mobility ◽

Radiation Induced

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Using the Hall effect to measure interface trap densities in silicon carbide and silicon metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.1473867 ◽

2002 ◽

Vol 80 (17) ◽

pp. 3219-3221 ◽

Cited By ~ 43

Author(s):

N. S. Saks ◽

M. G. Ancona ◽

R. W. Rendell

Keyword(s):

Silicon Carbide ◽

Metal Oxide ◽

Hall Effect ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Trap

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Analysis of interface trap density of metal–oxide-semiconductor devices with Pr2O3 gate dielectric using conductance method

Microelectronic Engineering ◽

10.1016/j.mee.2010.11.032 ◽

2011 ◽

Vol 88 (6) ◽

pp. 872-876 ◽

Cited By ~ 8

Author(s):

Sanghun Jeon ◽

Sungho Park

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Trap Density ◽

Oxide Semiconductor ◽

Interface Trap Density ◽

Interface Trap ◽

Conductance Method

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Reduction of interface‐trap density in metal‐oxide‐semiconductor devices by irradiation

Applied Physics Letters ◽

10.1063/1.109118 ◽

1993 ◽

Vol 62 (24) ◽

pp. 3170-3171 ◽

Cited By ~ 8

Author(s):

Artur Balasiński ◽

T. P. Ma

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Trap Density ◽

Oxide Semiconductor ◽

Interface Trap Density ◽

Interface Trap

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A charge pumping method for rapid determination of interface‐trap parameters in metal‐oxide‐semiconductor devices

Review of Scientific Instruments ◽

10.1063/1.1142575 ◽

1992 ◽

Vol 63 (5) ◽

pp. 3188-3190 ◽

Cited By ~ 5

Author(s):

Wenliang Chen ◽

Artur Balasinski ◽

T.‐P. Ma

Keyword(s):

Metal Oxide ◽

Rapid Determination ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Trap ◽

Charge Pumping ◽

A Charge

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The empirical dependence of radiation-induced charge neutralization on negative bias in dosimeters based on the metal-oxide-semiconductor field-effect transistor

Journal of Applied Physics ◽

10.1063/1.2259814 ◽

2006 ◽

Vol 100 (4) ◽

pp. 044505 ◽

Cited By ~ 12

Author(s):

Chris Benson ◽

Abdulrahman Albadri ◽

Malcolm J. Joyce ◽

Robert A. Price

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Empirical Dependence ◽

Radiation Induced ◽

Effect Transistor ◽

Induced Charge

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Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3125275 ◽

2009 ◽

Vol 27 (3) ◽

pp. 1261

Author(s):

Shu-Tong Chang ◽

Ming-Han Liao ◽

Chang-Chun Lee ◽

Jacky Huang ◽

Wei-Ching Wang ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Stress Engineering

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