Using the Hall effect to measure interface trap densities in silicon carbide and silicon metal-oxide-semiconductor devices

2002 ◽  
Vol 80 (17) ◽  
pp. 3219-3221 ◽  
Author(s):  
N. S. Saks ◽  
M. G. Ancona ◽  
R. W. Rendell
Keyword(s):  
Silicon Carbide ◽  
Metal Oxide ◽  
Hall Effect ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Trap

Effects of anneals in ammonia on the interface trap density near the band edges in 4H–silicon carbide metal-oxide-semiconductor capacitors

2000 ◽  
Vol 77 (22) ◽  
pp. 3601-3603 ◽  
Author(s):  
Gilyong Chung ◽  
Chin Che Tin ◽  
John R. Williams ◽  
K. McDonald ◽  
M. Di Ventra ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Trap Density ◽  
Oxide Semiconductor ◽  
Interface Trap Density ◽  
Interface Trap
Sign in / Sign up

Export Citation Format

Share Document