A charge pumping method for rapid determination of interface‐trap parameters in metal‐oxide‐semiconductor devices

Wenliang Chen; Artur Balasinski; T.‐P. Ma

doi:10.1063/1.1142575

A charge pumping method for rapid determination of interface‐trap parameters in metal‐oxide‐semiconductor devices

Review of Scientific Instruments ◽

10.1063/1.1142575 ◽

1992 ◽

Vol 63 (5) ◽

pp. 3188-3190 ◽

Cited By ~ 5

Author(s):

Wenliang Chen ◽

Artur Balasinski ◽

T.‐P. Ma

Keyword(s):

Metal Oxide ◽

Rapid Determination ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Trap ◽

Charge Pumping ◽

A Charge

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A new third‐level charge pumping method for accurate determination of interface‐trap parameters in metal‐oxide‐semiconductor field‐effect‐transistors

Review of Scientific Instruments ◽

10.1063/1.1144713 ◽

1994 ◽

Vol 65 (6) ◽

pp. 2141-2142 ◽

Cited By ~ 14

Author(s):

Jean‐Luc Autran ◽

Bernard Balland

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Accurate Determination ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Trap ◽

Charge Pumping

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Theory of near-interface trap quenching by impurities in SiC-based metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.4798536 ◽

2013 ◽

Vol 102 (12) ◽

pp. 123505 ◽

Cited By ~ 6

Author(s):

B. R. Tuttle ◽

X. Shen ◽

S. T. Pantelides

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Trap

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Determination of the Interface Trap Density in Metal Oxide Semiconductor Field-Effect Transistor through Subthreshold Slope Measurement

Japanese Journal of Applied Physics ◽

10.1143/jjap.32.4393 ◽

1993 ◽

Vol 32 (Part 1, No. 10) ◽

pp. 4393-4397 ◽

Cited By ~ 17

Author(s):

Jong-Son Lyu ◽

Kee-Soo Nam ◽

Choochon Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Trap Density ◽

Interface Trap ◽

Subthreshold Slope ◽

Effect Transistor

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Time dependence of radiation‐induced interface trap formation in metal‐oxide‐semiconductor devices as a function of oxide thickness and applied field

Journal of Applied Physics ◽

10.1063/1.349226 ◽

1991 ◽

Vol 70 (7) ◽

pp. 3734-3747 ◽

Cited By ~ 119

Author(s):

D. B. Brown ◽

N. S. Saks

Keyword(s):

Metal Oxide ◽

Time Dependence ◽

Applied Field ◽

Semiconductor Devices ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Trap ◽

Trap Formation ◽

Radiation Induced

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Using the Hall effect to measure interface trap densities in silicon carbide and silicon metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.1473867 ◽

2002 ◽

Vol 80 (17) ◽

pp. 3219-3221 ◽

Cited By ~ 43

Author(s):

N. S. Saks ◽

M. G. Ancona ◽

R. W. Rendell

Keyword(s):

Silicon Carbide ◽

Metal Oxide ◽

Hall Effect ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Trap

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Analysis of interface trap density of metal–oxide-semiconductor devices with Pr2O3 gate dielectric using conductance method

Microelectronic Engineering ◽

10.1016/j.mee.2010.11.032 ◽

2011 ◽

Vol 88 (6) ◽

pp. 872-876 ◽

Cited By ~ 8

Author(s):

Sanghun Jeon ◽

Sungho Park

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Trap Density ◽

Oxide Semiconductor ◽

Interface Trap Density ◽

Interface Trap ◽

Conductance Method

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Accurate Determination of Defects in the Gate Oxide of Si Metal Oxide Semiconductor Devices by Propane Infiltration

Journal of The Electrochemical Society ◽

10.1149/1.2221651 ◽

1993 ◽

Vol 140 (6) ◽

pp. L89-L92

Author(s):

J. P. Li ◽

A. J. Steckl

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Accurate Determination ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Quantum Mechanical Determination of the Potential and Carrier Distributions in the Inversion Layer of Metal-Oxide-Semiconductor Devices

10.1515/9783112472927-012 ◽

1979 ◽

pp. 129-142

Author(s):

C. T. Hsing ◽

D. P. Kennedy ◽

A. D. Sutherland ◽

K. M. van Vliet

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Mechanical

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Rigorous analysis of two-level charge pumping: Application to the extraction of interface trap concentration versus energy profiles in metal–oxide–semiconductor transistors

Journal of Applied Physics ◽

10.1063/1.1595138 ◽

2003 ◽

Vol 94 (5) ◽

pp. 3239-3248 ◽

Cited By ~ 21

Author(s):

D. Bauza

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Trap ◽

Rigorous Analysis ◽

Trap Concentration ◽

Charge Pumping ◽

Energy Profiles

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Rapid determination of “slow” states and “fast” states densities using thermally stimulated conductance spectroscopy on metal-oxide semiconductor capacitors

Materials Science in Semiconductor Processing ◽

10.1016/s1369-8001(00)00154-2 ◽

2001 ◽

Vol 4 (1-3) ◽

pp. 141-143 ◽

Cited By ~ 2

Author(s):

E. Duval ◽

L. Soliman ◽

E. Lheurette ◽

K. Ketata ◽

M. Benzohra ◽

...

Keyword(s):

Metal Oxide ◽

Rapid Determination ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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