scholarly journals Magnetic field-driven superconductor–insulator transition in boron-doped nanocrystalline chemical vapor deposition diamond

2010 ◽  
Vol 108 (1) ◽  
pp. 013904 ◽  
Author(s):  
Gufei Zhang ◽  
J. Vanacken ◽  
J. Van de Vondel ◽  
W. Decelle ◽  
J. Fritzsche ◽  
...  
2015 ◽  
Vol 118 (14) ◽  
pp. 145703 ◽  
Author(s):  
V. I. Zubkov ◽  
O. V. Kucherova ◽  
S. A. Bogdanov ◽  
A. V. Zubkova ◽  
J. E. Butler ◽  
...  

2010 ◽  
Vol 82 (8) ◽  
Author(s):  
Akihiro Kawano ◽  
Hitoshi Ishiwata ◽  
Shingo Iriyama ◽  
Ryosuke Okada ◽  
Takahide Yamaguchi ◽  
...  

Langmuir ◽  
2007 ◽  
Vol 23 (6) ◽  
pp. 3466-3472 ◽  
Author(s):  
Hiroshi Uetsuka ◽  
Dongchan Shin ◽  
Norio Tokuda ◽  
Kazuhiko Saeki ◽  
Christoph E. Nebel

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 237
Author(s):  
M. Abul Hossion ◽  
B. M. Arora

Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.


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