Ion beam induced surface modification of chemical vapor deposition diamond for x-ray beam position monitor applications

1997 ◽  
Vol 15 (3) ◽  
pp. 1200-1205 ◽  
Author(s):  
Chian Liu ◽  
D. Shu ◽  
T. M. Kuzay ◽  
L. Wen ◽  
C. A. Melendres
Keyword(s):  
Surface Modification ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Diamond ◽  
Beam Position Monitor ◽  
Beam Position ◽  
X Ray

Synchrotron radiation x-ray beam profile monitor using chemical vapor deposition diamond film

2006 ◽  
Vol 77 (12) ◽  
pp. 123105 ◽  
Author(s):  
Togo Kudo ◽  
Sunao Takahashi ◽  
Nobuteru Nariyama ◽  
Toko Hirono ◽  
Takeshi Tachibana ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Synchrotron Radiation ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Beam Profile ◽  
Chemical Vapor Deposition Diamond ◽  
X Ray ◽  
Beam Profile Monitor

scholarly journals Low-energy Ar+ and N+ ion beam induced chemical vapor deposition using hexamethyldisilazane for the formation of nitrogen containing SiC and carbon containing SiN films

PLoS ONE ◽  
2021 ◽  
Vol 16 (10) ◽  
pp. e0259216
Author(s):  
Satoru Yoshimura ◽  
Satoshi Sugimoto ◽  
Takae Takeuchi ◽  
Kensuke Murai ◽  
Masato Kiuchi
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Experimental Methodology ◽  
Si Substrate ◽  
X Ray ◽  
Silicon Nitride Films

We proposed an experimental methodology for producing films on substrates with an ion beam induced chemical vapor deposition (IBICVD) method using hexamethyldisilazane (HMDS) as a source material. In this study, both HMDS and ion beam were simultaneously injected onto a Si substrate. We selected Ar+ and N+ as the ion beam. The energy of the ion beam was 101 eV. Temperature of the Si substrate was set at 540 °C. After the experiments, films were found to be deposited on the substrates. The films were then analyzed by Fourier transform infrared (FTIR) spectroscopy, stylus profilometer, X-ray diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy (XPS). The FTIR and XPS results showed that silicon carbide films containing small amount of nitrogen were formed when Ar+ ions were injected in conjunction with HMDS. On the other hand, in the cases of N+ ion beam irradiation, silicon nitride films involving small amount of carbon were formed. It was noted that no film deposition was observed when HMDS alone was supplied to the substrates without any ion beam injections.

Lateral micro-ion beam induced charge characterization of chemical vapor deposition diamond

2002 ◽  
Vol 90 (1-2) ◽  
pp. 191-195
Author(s):  
Lu Rongrong ◽  
C. Manfredotti ◽  
F. Fizzotti ◽  
E. Vittone ◽  
A. Logiudice
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Diamond ◽  
Induced Charge

Response of chemical vapor deposition diamond detectors to X-ray

2004 ◽  
Vol 130 (6) ◽  
pp. 425-428 ◽  
Author(s):  
Zhang Minglong ◽  
Xia Yiben ◽  
Wang Linjun ◽  
Shen Hujiang
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Diamond ◽  
X Ray

Contribution of the x‐ray absorption spectroscopy to study TiO2thin films prepared by ion beam induced chemical vapor deposition

1995 ◽  
Vol 77 (2) ◽  
pp. 591-597 ◽  
Author(s):  
A. Caballero ◽  
D. Leinen ◽  
A. Fernández ◽  
A. Justo ◽  
J. P. Espinós ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Absorption Spectroscopy ◽  
Vapor Deposition ◽  
Ion Beam ◽  
Chemical Vapor ◽  
X Ray ◽  
X Ray Absorption

Synthesizing Nanocrystalline Carbon Thin Films by Hot Filament Chemical Vapor Deposition and Controlling Their Microstructure

2002 ◽  
Vol 17 (7) ◽  
pp. 1820-1833 ◽  
Author(s):  
S. Gupta ◽  
B. R. Weiner ◽  
G. Morell
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Noble Gas ◽  
Ion Beam ◽  
Chemical Vapor ◽  
X Ray ◽  
Hot Filament ◽  
Methane Concentrations

Nanocrystalline carbon (n-C) thin films were deposited on Mo substrates using methane (CH4) and hydrogen (H2) by the hot-filament chemical vapor deposition (HFCVD) technique. Process parameters relevant to the secondary nucleation rate were systematically varied (0.3–2.0% methane concentrations, 700–900 °C deposition temperatures, and continuous forward and reverse bias during growth) to study the corresponding variations in film microstructure. Standard nondestructive complementary characterization tools such as scanning electron microscopy, x-ray diffraction, atomic force microscopy, Raman spectroscopy, and x-ray photoelectron spectroscopy were utilized to obtain a coherent and comprehensive picture of the microstructure of these films. Through these studies we obtained an integral picture of the material grown and learned how to control key material properties such as surface morphology (faceted versus evenly smooth), grain size (microcrystalline versus nanocrystalline), surface roughness (from rough 150 rms to smooth 70 rms), and bonding configuration (sp3 C versus sp2 C), which result in physical properties relevant for several technological applications. These findings also indicate that there exist fundamental differences between HFCVD and microwave CVD (MWCVD) for methane concentrations above 1%, whereas some similarities are drawn among films grown by ion-beam assisted deposition, HFCVD assisted by low-energy particle bombardment, and MWCVD using noble gas in replacement of traditionally used hydrogen.

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