Superconductor-to-insulator transition in boron-doped diamond films grown using chemical vapor deposition

2010 ◽  
Vol 82 (8) ◽  
Author(s):  
Akihiro Kawano ◽  
Hitoshi Ishiwata ◽  
Shingo Iriyama ◽  
Ryosuke Okada ◽  
Takahide Yamaguchi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Insulator Transition ◽  
Boron Doped Diamond ◽  
Boron Doped

Fourier Transform Infrared Spectroscopic Study of Boron-Doped Micro/Nano/Ultrananocrystalline Diamond Prepared by Chemical Vapor Deposition

2014 ◽  
Vol 802 ◽  
pp. 140-145 ◽  
Author(s):  
Tatiane M. Arantes ◽  
Nazir M. Santos ◽  
Adriana F. Azevedo ◽  
Mauricio R. Baldan ◽  
Neidenei G. Ferreira
Keyword(s):  
Fourier Transform ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Fourier Transform Infrared ◽  
Gas Mixture ◽  
Infrared Spectroscopic Study ◽  
Boron Doped Diamond ◽  
Boron Doped

Boron-doped diamond (BDD) films were grown with different grain sizes. The films were deposited on silicon substrate after a suitable pre-treatment in a hot filament assisted by chemical vapor deposition (CVD) reactor in Ar/H2/CH4gas mixtures. The addition of argon to the growth gas mixture clearly revealed the transition from nanocrystalline (BDND) to ultrananocrystalline (BDUND) diamond films. Raman spectroscopy results of BDD, BDND and BDUND exhibited a good quality diamond films considering the diamond defined peak. Fourier Transform Infrared Spectroscopy (FTIR) spectra indicated carbonyl groups and B-C in BDND and BDUND films, while the microcrystalline BDD films showed only C-H bonds and boron-carbon (B-C), without the presence of oxygen and unsaturated species. Therefore, the carbonyl presence in the nanocrystalline films is mainly due to oxidation of transpolyacetylene present at the film grain boundaries. The transition became pronounced in the gas mixture with 60% of Ar, and the microcrystalline films were totally transformed in nanocrystalline diamond at 70% of Ar.

Fano interference of the Raman phonon in heavily boron‐doped diamond films grown by chemical vapor deposition

1995 ◽  
Vol 66 (5) ◽  
pp. 616-618 ◽  
Author(s):  
Joel W. Ager ◽  
W. Walukiewicz ◽  
Matthew McCluskey ◽  
Mary Anne Plano ◽  
Maurice I. Landstrass
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Fano Interference

Enhanced field emission characteristics of boron doped diamond films grown by microwave plasma assisted chemical vapor deposition

2011 ◽  
Vol 257 (6) ◽  
pp. 1854-1858 ◽  
Author(s):  
Pankaj M. Koinkar ◽  
Sandip S. Patil ◽  
Tae-Gyu Kim ◽  
Daisuke Yonekura ◽  
Mahendra A. More ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Field Emission ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Emission Characteristics ◽  
Boron Doped Diamond ◽  
Boron Doped

Synchrotron radiation X-ray analysis of boron-doped diamond films grown by hot-filament assisted chemical vapor deposition

2002 ◽  
Vol 11 (2) ◽  
pp. 153-159 ◽  
Author(s):  
Leide L.G Silva ◽  
Margareth K Franco ◽  
Fabiano Yokaichiya ◽  
Neidenei G Ferreira ◽  
Evaldo J Corat
Keyword(s):  
Chemical Vapor Deposition ◽  
Synchrotron Radiation ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Boron Doped Diamond ◽  
X Ray ◽  
Boron Doped ◽  
Hot Filament
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