Temperature admittance spectroscopy of boron doped chemical vapor deposition diamond

2015 ◽  
Vol 118 (14) ◽  
pp. 145703 ◽  
Author(s):  
V. I. Zubkov ◽  
O. V. Kucherova ◽  
S. A. Bogdanov ◽  
A. V. Zubkova ◽  
J. E. Butler ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Diamond ◽  
Admittance Spectroscopy ◽  
Boron Doped

Electrochemical Grafting of Boron-Doped Single-Crystalline Chemical Vapor Deposition Diamond with Nitrophenyl Molecules

Langmuir ◽  
2007 ◽  
Vol 23 (6) ◽  
pp. 3466-3472 ◽  
Author(s):  
Hiroshi Uetsuka ◽  
Dongchan Shin ◽  
Norio Tokuda ◽  
Kazuhiko Saeki ◽  
Christoph E. Nebel
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Diamond ◽  
Single Crystalline ◽  
Boron Doped

scholarly journals Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 237
Author(s):  
M. Abul Hossion ◽  
B. M. Arora
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Deposition Technique ◽  
Boron Doped ◽  
Vapor Deposition Technique ◽  
Polycrystalline Silicon Film

Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.

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