An analysis of complex spectra from deep level transient capacitance measurements

Ermanno Di Zitti; Giacomo M. Bisio; Pier Giorgio Fuochi; Bruno V. Passerini; Mauro Zambelli

doi:10.1063/1.343463

An analysis of complex spectra from deep level transient capacitance measurements

Journal of Applied Physics ◽

10.1063/1.343463 ◽

1989 ◽

Vol 66 (3) ◽

pp. 1199-1205 ◽

Cited By ~ 8

Author(s):

Ermanno Di Zitti ◽

Giacomo M. Bisio ◽

Pier Giorgio Fuochi ◽

Bruno V. Passerini ◽

Mauro Zambelli

Keyword(s):

Deep Level ◽

Capacitance Measurements ◽

Transient Capacitance

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Deep level transient capacitance measurements of GaSb self-assembled quantum dots

Journal of Applied Physics ◽

10.1063/1.1318391 ◽

2000 ◽

Vol 88 (10) ◽

pp. 5843-5849 ◽

Cited By ~ 17

Author(s):

R. Magno ◽

Brian R. Bennett ◽

E. R. Glaser

Keyword(s):

Quantum Dots ◽

Deep Level ◽

Capacitance Measurements ◽

Transient Capacitance ◽

Self Assembled

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Use of transient capacitance measurements for direct determination of minority‐carrier lifetime in low‐doped metal‐oxide‐semiconductor structures

Applied Physics Letters ◽

10.1063/1.95008 ◽

1984 ◽

Vol 45 (1) ◽

pp. 52-53 ◽

Cited By ~ 2

Author(s):

U. Efron ◽

P. O. Braatz

Keyword(s):

Carrier Lifetime ◽

Minority Carrier ◽

Direct Determination ◽

Minority Carrier Lifetime ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Capacitance Measurements ◽

Semiconductor Structures ◽

Transient Capacitance

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Quantitative Characterization of Near-Interface Oxide Traps in 4H-SiC MOS Capacitors by Transient Capacitance Measurements

ECS Transactions ◽

10.1149/06905.0219ecst ◽

2015 ◽

Vol 69 (5) ◽

pp. 219-225 ◽

Cited By ~ 3

Author(s):

Y. Fujino ◽

K. Kita

Keyword(s):

Quantitative Characterization ◽

Mos Capacitors ◽

Capacitance Measurements ◽

Transient Capacitance ◽

Oxide Traps

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Deep level transient capacitance spectroscopy of defects at native oxide-GaAs interfaces of 〈1̄1̄1̄〉 and 〈100〉 orientations

Surface Science ◽

10.1016/0039-6028(84)90541-7 ◽

1984 ◽

Vol 143 (2-3) ◽

pp. L417-L420 ◽

Cited By ~ 6

Author(s):

A.M. Narsale ◽

B.M. Arora

Keyword(s):

Deep Level ◽

Native Oxide ◽

Transient Capacitance ◽

Capacitance Spectroscopy

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Deep level transient capacitance spectroscopy of defects at native oxide-GaAs interfaces of 〈〉 and 〈100〉 orientations

Surface Science Letters ◽

10.1016/0167-2584(84)90634-0 ◽

1984 ◽

Vol 143 (2-3) ◽

pp. L417-L420

Author(s):

A.M. Narsale ◽

B.M. Arora

Keyword(s):

Deep Level ◽

Native Oxide ◽

Transient Capacitance ◽

Capacitance Spectroscopy

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Estimation of near-interface oxide trap density at SiO2/SiC metal-oxide-semiconductor interfaces by transient capacitance measurements at various temperatures

Journal of Applied Physics ◽

10.1063/1.4961871 ◽

2016 ◽

Vol 120 (8) ◽

pp. 085710 ◽

Cited By ~ 20

Author(s):

Yuki Fujino ◽

Koji Kita

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Trap Density ◽

Oxide Semiconductor ◽

Capacitance Measurements ◽

Semiconductor Interfaces ◽

Transient Capacitance ◽

Oxide Trap

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Characterization of Near-Interface Oxide Trap Density in SiC MOS Capacitors by Transient Capacitance Measurements at Various Temperatures

10.7567/ssdm.2015.ps-14-10 ◽

2015 ◽

Author(s):

Y. Fujino ◽

K. Kita

Keyword(s):

Trap Density ◽

Mos Capacitors ◽

Capacitance Measurements ◽

Transient Capacitance ◽

Oxide Trap

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Transient capacitance measurements of laser radiation-induced defects in silicon

Semiconductor Science and Technology ◽

10.1088/0268-1242/5/7/004 ◽

1990 ◽

Vol 5 (7) ◽

pp. 657-662 ◽

Cited By ~ 2

Author(s):

H S Tan ◽

S C Ng ◽

H S Woon ◽

G Hultquist

Keyword(s):

Laser Radiation ◽

Capacitance Measurements ◽

Radiation Induced ◽

Transient Capacitance ◽

Induced Defects

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TRANSIENT CAPACITANCE MEASUREMENTS OF ELECTRONIC STATES AT THE SiO2-Si INTERFACE

The Physics of SiO2 and its Interfaces ◽

10.1016/b978-0-08-023049-8.50078-6 ◽

1978 ◽

pp. 421-427 ◽

Cited By ~ 23

Author(s):

N.M. Johnson ◽

D.J. Bartelink ◽

M. Schulz

Keyword(s):

Electronic States ◽

Capacitance Measurements ◽

Transient Capacitance

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Quantitative Characterization of Near-Interface Oxide Traps in 4H-SiC MOS Capacitors by Transient Capacitance Measurements

ECS Meeting Abstracts ◽

10.1149/ma2015-02/18/835 ◽

2015 ◽

Keyword(s):

Quantitative Characterization ◽

Mos Capacitors ◽

Capacitance Measurements ◽

Transient Capacitance ◽

Oxide Traps

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