Quantitative Characterization of Near-Interface Oxide Traps in 4H-SiC MOS Capacitors by Transient Capacitance Measurements

2015 ◽  
Vol 69 (5) ◽  
pp. 219-225 ◽  
Author(s):  
Y. Fujino ◽  
K. Kita
Keyword(s):  
Quantitative Characterization ◽  
Mos Capacitors ◽  
Capacitance Measurements ◽  
Transient Capacitance ◽  
Oxide Traps

Transient Capacitance Characterization of Deep Levels in Undoped and Si-Doped GaN

2003 ◽  
Vol 764 ◽  
Author(s):  
S. Nakamura ◽  
P. Liu ◽  
M. Suhara ◽  
T. Okumura
Keyword(s):  
Chemical Vapor ◽  
Deep Levels ◽  
Yellow Luminescence ◽  
Capacitance Measurements ◽  
Transient Capacitance ◽  
Si Doped ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Isothermal Capacitance Transient Spectroscopy

AbstractThe deep levels in both undoped and Si-doped GaN layer grown by metalorganic chemical vapor deposition have been characterized by photocapacitance and transient capacitance spectroscopy. The increase in the photocapacitance was observed in both GaN samples in the range of 1.8 to 2.2 eV. This is due to the photoionization of carriers from the deep levels associated with the yellow luminescence (YL). In addition, the transient capacitance measurements after the photoionization were also performed in the range of 1.8 to 3.4 eV. The notable transient of capacitance was observed at the photon energies of about 2.1 and 3.4 eV, the former could be associated with the change in the charge state of the YL center and latter might stem from some other defects capturing photogenerated carriers. By using the isothermal capacitance transient spectroscopy (ICTS) analysis, the ICTS peaks due to the deep levels associated with YL were detected at about t = 150 s in both GaN samples. In addition, another ICTS peak was detected only in the Si-doped GaN samples. It is considered that this peak is associated with the deep levels deeper than YL levels and the deeper levels originate from defects induced by Si doping.

Oxide Traps Probed by Transient Capacitance Measurements on Lateral SiO2/4H-SiC MOSFETs

2018 ◽  
Vol 924 ◽  
pp. 285-288 ◽  
Author(s):  
Patrick Fiorenza ◽  
Ferdinando Iucolano ◽  
Mario Saggio ◽  
Fabrizio Roccaforte
Keyword(s):  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Interface Traps ◽  
Temperature Dependent ◽  
Discharge Time ◽  
Capacitance Measurements ◽  
Gate Capacitance ◽  
Transient Capacitance ◽  
Oxide Traps

In this paper, near interface traps (NITs) in lateral 4H-SiC MOSFETs were investigated employing temperature dependent transient gate capacitance measurements (C-t). TheC-tmeasurements as a function of temperature indicated that the effective NITs discharge time is temperature independent and electrons from NITs are emitted toward the semiconductor via-tunnelling and/or trap-to-trap tunnelling. The NITs discharge time was modelled taking into account also the interface state density in a distributed circuit and it allowed to locate traps within a distance of about 1.3nm from the SiO2/4H-SiC interface.

Electrical characterization of strained Si∕SiGe wafers using transient capacitance measurements

2005 ◽  
Vol 86 (12) ◽  
pp. 122111 ◽  
Author(s):  
Dong Wang ◽  
Masaharu Ninomiya ◽  
Masahiko Nakamae ◽  
Hiroshi Nakashima
Keyword(s):  
Electrical Characterization ◽  
Strained Si ◽  
Capacitance Measurements ◽  
Transient Capacitance

Characterization of Near-Interface Traps at Dielectric/SiC Interfaces Using CCDLTS

2019 ◽  
Vol 963 ◽  
pp. 217-221
Author(s):  
Isanka Jayawardhena ◽  
Asanka Jayawardena ◽  
Chun Kun Jiao ◽  
Dallas Morisette ◽  
Sarit Dhar
Keyword(s):  
Deep Level ◽  
Charge Trapping ◽  
Mos Capacitors ◽  
Dielectric Interfaces ◽  
Oxide Traps ◽  
The Difference ◽  
Transient Spectroscopy ◽  
Sic Wafer ◽  
First Time

Charge trapping at 4H-SiC/dielectric interfaces in 4H-SiC MOS capacitors has been investigated using constant capacitance deep level transient spectroscopy (CCDLTS). The experiments were focused on further understanding of the following aspects related to 4H-SiC/SiO2 interfaces: (i) Origin of near interface oxide traps (NITs), (ii) Effect of interfacial impurity/passivation methods and (iii) Characterization of near-interface oxide traps for different SiC wafer orientations. For the (0001) Si-face 4H-SiC/ SiO2 interface, two types of NITs are typically detected by CCDLTS, named ‘O1’ and ‘O2’ traps with emission activation energies of about 0.15±0.05 eV and 0.39±0.1 eV respectively below the 4H-SiC conduction band. Based on comparison with previous ab initio calculations, the physical identities of these defects have been suggested to be carbon dimers substituted for O dimers (‘O1’) and interstitial silicon atoms (‘O2’) in the near interfacial SiO2 respectively. In this work, it is shown for the first time that such traps are not observed for 4H-SiC/ Al2O3 interfaces, proving that these traps are inherent to the near-interfacial SiO2. In addition, the summary of CCDLTS results for Si-face with different interface trap passivation methods are included in this study. Finally, a comparison is presented for NO annealed (0001) Si-face, (11-20) a-face and (000-1) C-face interfaces that highlight the difference of CCDLTS signatures for the different crystal faces.

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