Channel stress measurements of 45 nm node transistors with embedded silicon-germanium source and drain using ultraviolet Raman spectroscopy

2010 ◽  
Vol 96 (21) ◽  
pp. 213513 ◽  
Author(s):  
C. P. Wong ◽  
J. Kasim ◽  
J. P. Liu ◽  
A. See ◽  
Z. X. Shen
Keyword(s):  
Raman Spectroscopy ◽  
Silicon Germanium ◽  
Stress Measurements

Localized High-Resolution Stress Measurements on MEMS Structures

2009 ◽  
Author(s):  
Dietmar Vogel ◽  
Astrid Gollhardt ◽  
Bernd Michel
Keyword(s):  
Raman Spectroscopy ◽  
High Resolution ◽  
Spatial Resolution ◽  
Focused Ion Beam ◽  
Stress Measurement ◽  
Ion Beam ◽  
Stress Relief ◽  
Stokes Line ◽  
Stress Measurements ◽  
Electron Backscattering

Three different methods of stress measurement with strong spatial resolution are presented. They base on stress relief techniques caused by focused ion beam milling, on altered electron backscattering by deformed lattices and on Stokes line shift measurements by Raman spectroscopy. The capability of these methods is demonstrated by their application to typical MEMS structures. A comparison between the methods is performed in order to outline potentials and limitations.

The Influence of Mechanical Stress on Hot-Carrier Degradation in Mosfet's

1993 ◽  
Vol 309 ◽  
Author(s):  
Ingrid De Wolf ◽  
Rudi Bellens ◽  
Guido Groeseneken ◽  
Herman E. Maes
Keyword(s):  
Raman Spectroscopy ◽  
Tensile Stress ◽  
Mechanical Stress ◽  
Interface Trap ◽  
Degradation Behaviour ◽  
Hot Carrier ◽  
Stress Measurements ◽  
Micro Raman Spectroscopy ◽  
Hot Carrier Degradation

AbstractNon-uniform hot-carrier degradation in n-channel polycide-gate MOSFET's with different thicknesses of the poly-Si film, and in p-channel polycide-gate MOSFET's with TiSi2- or CoSi2-gate-silicide, is studied. The n-MOSFET's with the thinnest poly-Si film, show an increased interface trap generation, while the influence of the gate-silicide material on the degradation behaviour of the p-MOSFET's is found to be very small. The results are evaluated in terms of the effect of mechanical stress on the degradation characteristics: favourable for compressive mechanical stress and unfavourable for tensile stress. A correlation with stress measurements by micro-Raman spectroscopy is made.

An Experimental Analysis of Residual Stress Measurements in Porous Silicon Using Micro-Raman Spectroscopy

2004 ◽  
Vol 21 (2) ◽  
pp. 403-405 ◽  
Author(s):  
Lei Zhen-Kun ◽  
Kang Yi-Lan ◽  
Hu Ming ◽  
Qiu Yu ◽  
Xu Han ◽  
...  
Keyword(s):  
Residual Stress ◽  
Raman Spectroscopy ◽  
Porous Silicon ◽  
Experimental Analysis ◽  
Stress Measurements ◽  
Micro Raman Spectroscopy

Analysis of boron strain compensation in silicon-germanium alloys by Raman spectroscopy

2006 ◽  
Vol 88 (20) ◽  
pp. 202114 ◽  
Author(s):  
Saurabh Chopra ◽  
Mehmet C. Ozturk ◽  
Veena Misra ◽  
Kris McGuire ◽  
Laurie E. McNeil
Keyword(s):  
Raman Spectroscopy ◽  
Silicon Germanium ◽  
Strain Compensation ◽  
Silicon Germanium Alloys

scholarly journals Local stress measurements in laterally oxidized GaAs/AlxGa1−xAs heterostructures by micro-Raman spectroscopy

1997 ◽  
Vol 71 (17) ◽  
pp. 2520-2522 ◽  
Author(s):  
J. P. Landesman ◽  
A. Fiore ◽  
J. Nagle ◽  
V. Berger ◽  
E. Rosencher ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Local Stress ◽  
Stress Measurements ◽  
Micro Raman Spectroscopy
Sign in / Sign up

Export Citation Format

Share Document