Local stress measurements in laterally oxidized GaAs/AlxGa1−xAs heterostructures by micro-Raman spectroscopy

J. P. Landesman; A. Fiore; J. Nagle; V. Berger; E. Rosencher; P. Puech

doi:10.1063/1.120420

Local stress measurements in laterally oxidized GaAs/AlxGa1−xAs heterostructures by micro-Raman spectroscopy

Applied Physics Letters ◽

10.1063/1.120420 ◽

1997 ◽

Vol 71 (17) ◽

pp. 2520-2522 ◽

Cited By ~ 23

Author(s):

J. P. Landesman ◽

A. Fiore ◽

J. Nagle ◽

V. Berger ◽

E. Rosencher ◽

...

Keyword(s):

Raman Spectroscopy ◽

Local Stress ◽

Stress Measurements ◽

Micro Raman Spectroscopy

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Local stress determination in Shallow Trench Insulator structures with one-side and two-sides Pad-SiN layer by polarized micro-Raman spectroscopy extraction and mechanical modelization

2011 International Semiconductor Device Research Symposium (ISDRS) ◽

10.1109/isdrs.2011.6135349 ◽

2011 ◽

Author(s):

M. H. Liao ◽

L. C. Chang

Keyword(s):

Raman Spectroscopy ◽

Local Stress ◽

Stress Determination ◽

Micro Raman Spectroscopy ◽

Two Sides

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Stress measurements in oxidized GaAs-AlAs structures by micro-Raman spectroscopy

Conference Proceedings. LEOS'98. 11th Annual Meeting. IEEE Lasers and Electro-Optics Society 1998 Annual Meeting (Cat. No.98CH36243) ◽

10.1109/leos.1998.739549 ◽

2002 ◽

Cited By ~ 2

Author(s):

Z. Pan ◽

Y. Zhang ◽

Y. Du ◽

H.X. Han ◽

R.H. Wu

Keyword(s):

Raman Spectroscopy ◽

Stress Measurements ◽

Micro Raman Spectroscopy

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Local stress analysis of single crystalline silicon resonator using micro Raman spectroscopy

2011 IEEE 24th International Conference on Micro Electro Mechanical Systems ◽

10.1109/memsys.2011.5734458 ◽

2011 ◽

Cited By ~ 3

Author(s):

A. Taniyama ◽

Y. Hirai ◽

K. Sugano ◽

O. Tabata ◽

T. Ikehara ◽

...

Keyword(s):

Raman Spectroscopy ◽

Stress Analysis ◽

Crystalline Silicon ◽

Local Stress ◽

Single Crystalline Silicon ◽

Single Crystalline ◽

Micro Raman Spectroscopy ◽

Silicon Resonator

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Raman Spectroscopy: A Unique Tool for the Study of Thin Films

MRS Proceedings ◽

10.1557/proc-615-g8.1.1 ◽

2000 ◽

Vol 615 ◽

Cited By ~ 1

Author(s):

Ingrid De Wolf

Keyword(s):

Thin Films ◽

Raman Spectroscopy ◽

Local Stress ◽

Micro Raman Spectroscopy

ABSTRACTIn this paper, the different applications of Raman spectroscopy for the study of thin films is briefly discussed, using examples from microelectronics. Special attention is given to the application of micro-Raman spectroscopy for the measurement of local stress in and near films.

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Local stress determination in shallow trench insulator structures with one-side and two-sides pad-SiN layer by polarized micro-Raman spectroscopy extraction and mechanical modelization

Journal of Applied Physics ◽

10.1063/1.3116531 ◽

2009 ◽

Vol 105 (9) ◽

pp. 093511 ◽

Cited By ~ 20

Author(s):

Milton M. H. Liao

Keyword(s):

Raman Spectroscopy ◽

Local Stress ◽

Stress Determination ◽

Micro Raman Spectroscopy ◽

Two Sides

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The Influence of Mechanical Stress on Hot-Carrier Degradation in Mosfet's

MRS Proceedings ◽

10.1557/proc-309-281 ◽

1993 ◽

Vol 309 ◽

Author(s):

Ingrid De Wolf ◽

Rudi Bellens ◽

Guido Groeseneken ◽

Herman E. Maes

Keyword(s):

Raman Spectroscopy ◽

Tensile Stress ◽

Mechanical Stress ◽

Interface Trap ◽

Degradation Behaviour ◽

Hot Carrier ◽

Stress Measurements ◽

Micro Raman Spectroscopy ◽

Hot Carrier Degradation

AbstractNon-uniform hot-carrier degradation in n-channel polycide-gate MOSFET's with different thicknesses of the poly-Si film, and in p-channel polycide-gate MOSFET's with TiSi2- or CoSi2-gate-silicide, is studied. The n-MOSFET's with the thinnest poly-Si film, show an increased interface trap generation, while the influence of the gate-silicide material on the degradation behaviour of the p-MOSFET's is found to be very small. The results are evaluated in terms of the effect of mechanical stress on the degradation characteristics: favourable for compressive mechanical stress and unfavourable for tensile stress. A correlation with stress measurements by micro-Raman spectroscopy is made.

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Characterization of Local Stress in Silicon Around Through-Silicon Via Interconnects By Using Micro Raman Spectroscopy

ECS Meeting Abstracts ◽

10.1149/ma2013-02/29/2059 ◽

2013 ◽

Keyword(s):

Raman Spectroscopy ◽

Local Stress ◽

Through Silicon Via ◽

Micro Raman Spectroscopy

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Measurement of local stress in silicon nitride films grown by plasma‐enhanced chemical vapor deposition using micro‐Raman spectroscopy

Applied Physics Letters ◽

10.1063/1.106346 ◽

1991 ◽

Vol 59 (9) ◽

pp. 1066-1068 ◽

Cited By ~ 13

Author(s):

Yoshio Okada ◽

Shin‐ichi Nakajima

Keyword(s):

Raman Spectroscopy ◽

Chemical Vapor Deposition ◽

Silicon Nitride ◽

Vapor Deposition ◽

Chemical Vapor ◽

Local Stress ◽

Micro Raman Spectroscopy ◽

Silicon Nitride Films

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Local stress measurements in packaging by Raman spectroscopy

Proceedings of 3rd Electronics Packaging Technology Conference (EPTC 2000) (Cat. No.00EX456) ◽

10.1109/eptc.2000.906366 ◽

2002 ◽

Cited By ~ 3

Author(s):

Jian Chen ◽

M. Chan ◽

I. De Wolf

Keyword(s):

Raman Spectroscopy ◽

Local Stress ◽

Stress Measurements

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An Experimental Analysis of Residual Stress Measurements in Porous Silicon Using Micro-Raman Spectroscopy

Chinese Physics Letters ◽

10.1088/0256-307x/21/2/053 ◽

2004 ◽

Vol 21 (2) ◽

pp. 403-405 ◽

Cited By ~ 17

Author(s):

Lei Zhen-Kun ◽

Kang Yi-Lan ◽

Hu Ming ◽

Qiu Yu ◽

Xu Han ◽

...

Keyword(s):

Residual Stress ◽

Raman Spectroscopy ◽

Porous Silicon ◽

Experimental Analysis ◽

Stress Measurements ◽

Micro Raman Spectroscopy

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