Interface states of Ag/(110)GaAs Schottky diodes without and with interfacial layers

1988 ◽  
Vol 64 (1) ◽  
pp. 218-224 ◽  
Author(s):  
W. Platen ◽  
H.‐J. Schmutzler ◽  
D. Kohl ◽  
K.‐A. Brauchle ◽  
K. Wolter
Keyword(s):  
Schottky Diodes ◽  
Interface States ◽  
Interfacial Layers

Interface states mediated reverse leakage through metal/AlxGa1−xN∕GaN Schottky diodes

2008 ◽  
Vol 26 (6) ◽  
pp. 1987-1992 ◽  
Author(s):  
Changzhi Lu ◽  
Xiaoling Zhang ◽  
Xuesong Xie ◽  
Shiwei Feng ◽  
Ibrahima Diagne ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Interface States

Characterization of Al/GaAs Schottky barriers with thin Si interfacial layers

1993 ◽  
Vol 51 ◽  
pp. 800-801
Author(s):  
M.W. Bench ◽  
T.J. Miller ◽  
M.I. Nathan ◽  
C.B. Carter
Keyword(s):  
Molecular Beam Epitaxy ◽  
Barrier Height ◽  
Molecular Beam ◽  
Schottky Diodes ◽  
Growth Conditions ◽  
High Energy ◽  
Exact Nature ◽  
Interfacial Layers ◽  
Transmission Electron ◽  
Layer Structures

It has been shown in previous reports that barrier height variations can be achieved in GaAs Schottky diodes grown using molecular beam epitaxy by utilizing a thin epitaxial Si layer (a few monolayers) between the GaAs and the Al contact. The effective barrier height was found to be dependent on the thickness and growth conditions of the Si layer. However, there has remained a question as to the exact nature of the interfacial Si layer. In the present investigation, samples with different Si layer thicknesses (no Si, 6 Å Si, and 20 Å Si, as determined in situ during growth using reflection high energy electron diffraction (RHEED)) were characterized using transmission electron microscopy (TEM) to determine the nature of the Si layers. In the present study, it was also found that the presence of the interfacial Si layers affected the growth orientation and morphology of the Al layers.The layer structures investigated were grown using molecular beam epitaxy in a system described elsewhere.

Role of hydrogen in interface states parameters of Ni/n-Si (111) Schottky diodes: (c-v) studies

1991 ◽  
Vol 10 (10) ◽  
pp. 556-558 ◽  
Author(s):  
P. P. Sahay ◽  
M. Shamsuddin ◽  
R. S. Srivastava
Keyword(s):  
Schottky Diodes ◽  
Interface States

Process Dependent Interface States of Ag/(110)GaAs Schottky Diodes

1991 ◽  
Vol 38-41 ◽  
pp. 1409-1414
Author(s):  
H.-J. Schmutzler ◽  
W. Platen ◽  
D. Kohl ◽  
K. Wolter
Keyword(s):  
Schottky Diodes ◽  
Interface States
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