Interface states mediated reverse leakage through metal/AlxGa1−xN∕GaN Schottky diodes

2008 ◽  
Vol 26 (6) ◽  
pp. 1987-1992 ◽  
Author(s):  
Changzhi Lu ◽  
Xiaoling Zhang ◽  
Xuesong Xie ◽  
Shiwei Feng ◽  
Ibrahima Diagne ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Interface States

Interface states of Ag/(110)GaAs Schottky diodes without and with interfacial layers

1988 ◽  
Vol 64 (1) ◽  
pp. 218-224 ◽  
Author(s):  
W. Platen ◽  
H.‐J. Schmutzler ◽  
D. Kohl ◽  
K.‐A. Brauchle ◽  
K. Wolter
Keyword(s):  
Schottky Diodes ◽  
Interface States ◽  
Interfacial Layers

Role of hydrogen in interface states parameters of Ni/n-Si (111) Schottky diodes: (c-v) studies

1991 ◽  
Vol 10 (10) ◽  
pp. 556-558 ◽  
Author(s):  
P. P. Sahay ◽  
M. Shamsuddin ◽  
R. S. Srivastava
Keyword(s):  
Schottky Diodes ◽  
Interface States

Process Dependent Interface States of Ag/(110)GaAs Schottky Diodes

1991 ◽  
Vol 38-41 ◽  
pp. 1409-1414
Author(s):  
H.-J. Schmutzler ◽  
W. Platen ◽  
D. Kohl ◽  
K. Wolter
Keyword(s):  
Schottky Diodes ◽  
Interface States
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