Role of hydrogen in interface states parameters of Ni/n-Si (111) Schottky diodes: (c-v) studies

1991 ◽  
Vol 10 (10) ◽  
pp. 556-558 ◽  
Author(s):  
P. P. Sahay ◽  
M. Shamsuddin ◽  
R. S. Srivastava
Keyword(s):  
Schottky Diodes ◽  
Interface States

The role of interface states and series resistance on the I–V and C–V characteristics in Al/SnO2/p-Si Schottky diodes

2003 ◽  
Vol 47 (10) ◽  
pp. 1847-1854 ◽  
Author(s):  
Ş. Altındal ◽  
S. Karadeniz ◽  
N. Tuğluoğlu ◽  
A. Tataroğlu
Keyword(s):  
Series Resistance ◽  
Schottky Diodes ◽  
Interface States

Electrical properties of planar AlGaN/GaN Schottky diodes: Role of 2DEG and analysis of non-idealities

2017 ◽  
Vol 121 (13) ◽  
pp. 135701 ◽  
Author(s):  
Anna Persano ◽  
Iolanda Pio ◽  
Vittorianna Tasco ◽  
Massimo Cuscunà ◽  
Adriana Passaseo ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Schottky Diodes

Evaluation of On-State Resistance and Boron-Related Levels in n-Type 4H-SiC

2005 ◽  
Vol 483-485 ◽  
pp. 425-428 ◽  
Author(s):  
R.R Ciechonski ◽  
Samuele Porro ◽  
Mikael Syväjärvi ◽  
Rositza Yakimova
Keyword(s):  
Minority Carrier ◽  
Deep Level ◽  
Schottky Diodes ◽  
Depth Profiling ◽  
Thermionic Emission ◽  
Barrier Heights ◽  
Transient Spectroscopy ◽  
State Resistance ◽  
Thick Layers

Specific on-resistance Ron estimated from current density-voltage characteristics of Schottky diodes on thick layers exhibits variations from tens of mW.cm2 to tens of W.cm2 for different doping levels. In order to understand the occurrence of high on-state resistance, Schottky barrier heights were first estimated for both forward and reverse bias with the application of thermionic emission theory and were in agreement with a literature reported values. Decrease in mobility with the temperature was observed and its dependencies of T–1.3 and T–2.0 for moderately doped and low doped samples respectively were estimated. From deep level measurements by Minority Carrier Transient Spectroscopy, an influence of shallow boron related levels and D-center on dependence of on-state resistance was observed, being more pronounced in low doped samples. Similar tendency was observed in depth profiling of Ron. This suggests a major role of boron in a compensation mechanism thus resulting in high Ron.

scholarly journals Deep levels in n-type Schottky and p+-n homojunction GaN diodes

2000 ◽  
Vol 5 (S1) ◽  
pp. 922-928
Author(s):  
A. Hierro ◽  
D. Kwon ◽  
S. A. Ringel ◽  
M. Hansen ◽  
U. K. Mishra ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Minority Carrier ◽  
Deep Level ◽  
Schottky Diodes ◽  
Yellow Luminescence ◽  
Arrhenius Behavior ◽  
Electron Level ◽  
Transient Spectroscopy ◽  
Electron And Hole Traps

The deep level spectra in both p+-n homojunction and n-type Schottky GaN diodes are studied by deep level transient spectroscopy (DLTS) in order to compare the role of the junction configuration on the defects found within the n-GaN layer. Both majority and minority carrier DLTS measurements are performed on the diodes allowing the observation of both electron and hole traps in n-GaN. An electron level at Ec−Et=0.58 and 0.62 V is observed in the p+-n and Schottky diodes, respectively, with a concentration of ∼3−4×1014 cm−3 and a capture cross section of ∼1−5×10−15 cm2. The similar Arrhenius behavior indicates that both emissions are related to the same defect. The shift in activation energy is correlated to the electric field enhanced-emission in the p+-n diode, where the junction barrier is much larger. The p+-n diode configuration allows the observation of a hole trap at Et−Ev=0.87 eV in the n-GaN which is very likely related to the yellow luminescence band.

Zinc oxide: bulk growth, role of hydrogen and Schottky diodes

2009 ◽  
Vol 42 (15) ◽  
pp. 153001 ◽  
Author(s):  
E V Monakhov ◽  
A Yu Kuznetsov ◽  
B G Svensson
Keyword(s):  
Zinc Oxide ◽  
Schottky Diodes ◽  
Bulk Growth
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