Type‐II localized interface states and Si surface preparation for Ni, Pt, Al/Si Schottky diodes

1978 ◽  
Vol 32 (4) ◽  
pp. 256-258 ◽  
Author(s):  
P. Muret ◽  
A. Deneuville
Keyword(s):  
Schottky Diodes ◽  
Surface Preparation ◽  
Interface States ◽  
Type Ii

Photoelectric Cells of Merocyanine Langmuir-Blodgett Films Utilizing Surface Plasmon Excitations

2001 ◽  
Vol 708 ◽  
Author(s):  
Keizo Kato ◽  
Futoshi Takahashi ◽  
Kazunari Shinbo ◽  
Futao Kaneko ◽  
Takashi Wakamatsu
Keyword(s):  
Thin Films ◽  
Surface Plasmon ◽  
Short Circuit ◽  
Schottky Diodes ◽  
Attenuated Total Reflection ◽  
Dielectric Constants ◽  
Type I ◽  
Type Ii ◽  
Lb Films ◽  
Langmuir Blodgett

ABSTRACTShort-circuit photocurrents (ISC) due to surface plasmon (SP) excitations have been investigated for the photoelectric cells using Langmuir-Blodgett (LB) films of merocyanine (MC) dye. The MC dye exhibits p-type conduction, and the Schottky and Ohmic contacts are obtained at the interfaces between MC LB films and Al thin films and between MC LB films and Ag thin films, respectively. Since the Schottky diodes show the photoelectric effects, the Schottky photoelectric cells have been constructed. The cells with two kinds of structures, that is, prism/Al/MC/Ag (type I) and prism/MgF2/Al/MC/Ag (type II), have been prepared. In the attenuated total reflection (ATR) method, the types I and II have the Kretschmann and both the Kretschmann and Otto configurations, respectively. SP has been resonantly excited at the interface between Ag and air for the type I and at the interfaces between MgF2 and Al between Ag and air for the type II. The ATR and the ISC properties have been simultaneously measured as a function of the incident angles of the laser beams. The peaks of the ISC have corresponded to the resonant angles of the ATR curves. The electric fields and optical absorptions in the cells have been also calculated using the dielectric constants and the film thicknesses obtained from the ATR measurements. The calculated absorptions in the MC layers as a function of the incident angles have corresponded to the results of ISC. It has been estimated that the ISC for both types I and II could be enhanced by the excitations of SP in the ATR configurations.

Interface states mediated reverse leakage through metal/AlxGa1−xN∕GaN Schottky diodes

2008 ◽  
Vol 26 (6) ◽  
pp. 1987-1992 ◽  
Author(s):  
Changzhi Lu ◽  
Xiaoling Zhang ◽  
Xuesong Xie ◽  
Shiwei Feng ◽  
Ibrahima Diagne ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Interface States

Interface states of Ag/(110)GaAs Schottky diodes without and with interfacial layers

1988 ◽  
Vol 64 (1) ◽  
pp. 218-224 ◽  
Author(s):  
W. Platen ◽  
H.‐J. Schmutzler ◽  
D. Kohl ◽  
K.‐A. Brauchle ◽  
K. Wolter
Keyword(s):  
Schottky Diodes ◽  
Interface States ◽  
Interfacial Layers

Interface States and Barrier Heights on Metal/4H-SiC Interfaces

2009 ◽  
Vol 615-617 ◽  
pp. 427-430 ◽  
Author(s):  
Shaweta Khanna ◽  
Arti Noor ◽  
Man Singh Tyagi ◽  
Sonnathi Neeleshwar
Keyword(s):  
Work Function ◽  
Barrier Height ◽  
Surface Preparation ◽  
Interface States ◽  
Careful Examination ◽  
Barrier Heights ◽  
Metal Work Function ◽  
Wide Range ◽  
Metal Work ◽  
Density Of Interface States

Available data on Schottky barrier heights on silicon and carbon rich faces of 4H-SiC have been carefully analyzed to investigate the mechanism of barrier formation on these surfaces. As in case of 3C and 6H-SiC, the barrier heights depend strongly upon method of surface preparation with a considerable scatter in the barrier height for a given metal-semiconductor system. However, for each metal the barrier height depends on the metal work function and strong pinning of the Fermi level has not been observed. The slopes of the linear relation between the barrier heights and metal work functions varies over a wide range from 0.2 to about 0.75 indicating that the density of interface states depends strongly on the method of surface preparation. By a careful examination of the data on barrier heights we could identify a set of nearly ideal interfaces in which the barrier heights vary linearly with metal work function approaching almost to the Schottky limit. The density of interface states for these interfaces is estimated to lie between 4.671012 to 2.631012 states/ cm2 eV on the silicon rich surface and about three times higher on the carbon rich faces. We also observed that on these ideal interfaces the density of interface states was almost independent of metal indicating that the metal induced gap states (MIGS) play no role in determining the barrier heights in metal-4H-SiC Schottky barriers.

Role of hydrogen in interface states parameters of Ni/n-Si (111) Schottky diodes: (c-v) studies

1991 ◽  
Vol 10 (10) ◽  
pp. 556-558 ◽  
Author(s):  
P. P. Sahay ◽  
M. Shamsuddin ◽  
R. S. Srivastava
Keyword(s):  
Schottky Diodes ◽  
Interface States
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