General model for intrinsic dopant diffusion in silicon under nonequilibrium point‐defect conditions

1988 ◽  
Vol 64 (9) ◽  
pp. 4484-4490 ◽  
Author(s):  
N. E. B. Cowern
Keyword(s):  
Point Defect ◽  
General Model ◽  
Dopant Diffusion

Point defect kinetics and dopant diffusion during silicon oxidation

1986 ◽  
Vol 48 (10) ◽  
pp. 627-629 ◽  
Author(s):  
D. Mathiot ◽  
J. C. Pfister
Keyword(s):  
Point Defect ◽  
Dopant Diffusion ◽  
Silicon Oxidation

Mechanisms of Doping-Enhanced Superlattice Disordering and of Gallium Self-Diffusion in GaAs

1987 ◽  
Vol 104 ◽  
Author(s):  
T. Y. Tan ◽  
U. Gösele ◽  
B. P. R. Marioton
Keyword(s):  
Fermi Level ◽  
Point Defect ◽  
Dopant Diffusion ◽  
Self Diffusion ◽  
N Doping ◽  
Charged Point Defect ◽  
Charged Point ◽  
Defect Species ◽  
Level Effect ◽  
Positively Charged

ABSTRACTRecently available Ga-Al interdiffusion results in GaAs/AlAs superlattices allow to conclude that Ga self-diffusion in GaAs is carried by triply-negatively charged Ga vacancies under intrinsic and n-doping conditions. The mechanism of the Si enhanced superlattice disordering is the Fermi-level effect which increases the concentrations of the charged point defect species. For the effect of the p-dopants Be and Zn, the Fermi-level effect has to be considered together with dopant diffusion induced Ga self-interstitial supersaturation or undersaturation. Self-diffusion of Ga in GaAs under heavy p-doping conditions is governed by positively charged Ga self-interstitials.

Fluorine in preamorphized Si: Point defect engineering and control of dopant diffusion

2006 ◽  
Vol 99 (10) ◽  
pp. 103510 ◽  
Author(s):  
G. Impellizzeri ◽  
S. Mirabella ◽  
F. Priolo ◽  
E. Napolitani ◽  
A. Carnera
Keyword(s):  
Point Defect ◽  
Dopant Diffusion ◽  
Defect Engineering ◽  
And Control

Point defect/dopant diffusion considerations following preamorphization of silicon via Si+and Ge+implantation

1988 ◽  
Vol 52 (10) ◽  
pp. 813-815 ◽  
Author(s):  
A. C. Ajmera ◽  
G. A. Rozgonyi ◽  
R. B. Fair
Keyword(s):  
Point Defect ◽  
Dopant Diffusion

Detection of a point defect in a silicon single crystal by high-resolution TEM

1995 ◽  
Vol 53 ◽  
pp. 466-467
Author(s):  
M. Awaji
Keyword(s):  
High Resolution ◽  
Single Crystal ◽  
Point Defect ◽  
Point Defects ◽  
Noise Level ◽  
Dark Field ◽  
Silicon Single Crystal ◽  
High Resolution Image ◽  
Dark Field Imaging ◽  
Field Imaging

It is necessary to improve the resolution, brightness and signal-to-noise ratio(s/n) for the detection and identification of point defects in crystals. In order to observe point defects, multi-beam dark-field imaging is one of the useful methods. Though this method can improve resolution and brightness compared with dark-field imaging by diffuse scattering, the problem of s/n still exists. In order to improve the exposure time due to the low intensity of the dark-field image and the low resolution, we discuss in this paper the bright-field high-resolution image and the corresponding subtracted image with reference to a changing noise level, and examine the possibility for in-situ observation, identification and detection of the movement of a point defect produced in the early stage of damage process by high energy electron bombardment.The high-resolution image contrast of a silicon single crystal in the [10] orientation containing a triple divacancy cluster is calculated using the Cowley-Moodie dynamical theory and for a changing gaussian noise level. This divacancy model was deduced from experimental results obtained by electron spin resonance. The calculation condition was for the lMeV Berkeley ARM operated at 800KeV.

Point Defect Absorption and Dislocation Loop Formation at Grain Boundaries in Hvem-Irradiated Zr and Its Alloys:1. Influence of Solute Addition

1985 ◽  
Vol 43 ◽  
pp. 350-351
Author(s):  
R.A. Herring ◽  
M. Griffiths ◽  
M.H Loretto ◽  
R.E. Smallman
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Point Defect ◽  
Reactor Core ◽  
Solute Concentration ◽  
Nuclear Industry ◽  
Dislocation Loops ◽  
Loop Formation ◽  
Component Material ◽  
Impurity Interaction

Because Zr is used in the nuclear industry to sheath fuel and as structural component material within the reactor core, it is important to understand Zr's point defect properties. In the present work point defect-impurity interaction has been assessed by measuring the influence of grain boundaries on the width of the zone denuded of dislocation loops in a series of irradiated Zr alloys. Electropolished Zr and its alloys have been irradiated using an AEI EM7 HVEM at 1 MeV, ∼675 K and ∼10-6 torr vacuum pressure. During some HVEM irradiations it has been seen that there is a difference in the loop nucleation and growth behaviour adjacent to the grain boundary as compared with the mid-grain region. The width of the region influenced by the presence of the grain boundary should be a function of the irradiation temperature, dose rate, solute concentration and crystallographic orientation.

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