Fluorine in preamorphized Si: Point defect engineering and control of dopant diffusion

2006 ◽  
Vol 99 (10) ◽  
pp. 103510 ◽  
Author(s):  
G. Impellizzeri ◽  
S. Mirabella ◽  
F. Priolo ◽  
E. Napolitani ◽  
A. Carnera
Keyword(s):  
Point Defect ◽  
Dopant Diffusion ◽  
Defect Engineering ◽  
And Control

Boron diffusion in silicon: the anomalies and control by point defect engineering

2003 ◽  
Vol 42 (3-4) ◽  
pp. 65-114 ◽  
Author(s):  
Lin Shao ◽  
Jiarui Liu ◽  
Quark Y. Chen ◽  
Wei-Kan Chu
Keyword(s):  
Point Defect ◽  
Boron Diffusion ◽  
Defect Engineering ◽  
And Control

Using point defect engineering to reduce the effects of energy nonmonochromaticity of B ion beams on shallow junction formation

2004 ◽  
Vol 96 (1) ◽  
pp. 919-921 ◽  
Author(s):  
Lin Shao ◽  
John Chen ◽  
Jianming Zhang ◽  
D. Tang ◽  
Sanjay Patel ◽  
...  
Keyword(s):  
Point Defect ◽  
Ion Beams ◽  
Defect Engineering ◽  
Shallow Junction ◽  
Junction Formation

Defect-Free Shallow P/N Junction by Point Defect Engineering

1992 ◽  
Author(s):  
Shigeo Onishi ◽  
Akitsu Ayukawa ◽  
Keiichiro Uda ◽  
Keizo Sakiyama
Keyword(s):  
Point Defect ◽  
Defect Engineering

Application of High Energy Ion Beam on the Control of Boron Diffusion

2003 ◽  
Vol 792 ◽  
Author(s):  
Wei-Kan Chu ◽  
Lin Shao ◽  
Jiarui Liu
Keyword(s):  
Point Defect ◽  
Point Defects ◽  
Anomalous Diffusion ◽  
Ion Beam ◽  
Surface Region ◽  
High Energy ◽  
Boron Diffusion ◽  
Defect Engineering ◽  
Projected Range ◽  
Ultrashallow Junction

ABSTRACTAnomalous diffusion of boron during annealing is a detriment on the fabrication of ultrashallow junction required by the next generation Si devices. This has driven the need to develop new doping methods. In the point defect engineering approach, high-energy ion bombardments inject vacancies near the surface region and create excessive interstitials near the end of projected range of incident ions. Such manipulation of point defects can retard boron diffusion and enhance activation of boron. We will review the current understanding of boron diffusion and our recent activities in point defect engineering.

scholarly journals Unprecedented thermal stability of inherently metastable titanium aluminum nitride by point defect engineering

2016 ◽  
Vol 5 (3) ◽  
pp. 158-169 ◽  
Author(s):  
Moritz to Baben ◽  
Marcus Hans ◽  
Daniel Primetzhofer ◽  
Simon Evertz ◽  
Holger Ruess ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Aluminum Nitride ◽  
Point Defect ◽  
Defect Engineering ◽  
Titanium Aluminum ◽  
Titanium Aluminum Nitride ◽  
Thermal Stability Of

He induced nanovoids for point-defect engineering in B-implanted crystalline Si

2007 ◽  
Vol 101 (2) ◽  
pp. 023515 ◽  
Author(s):  
E. Bruno ◽  
S. Mirabella ◽  
F. Priolo ◽  
E. Napolitani ◽  
C. Bongiorno ◽  
...  
Keyword(s):  
Point Defect ◽  
Defect Engineering
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