Low threshold 1.3‐μm InGaAsP/InP lasers prepared by a single‐step liquid‐phase epitaxy

1988 ◽  
Vol 63 (6) ◽  
pp. 2151-2153 ◽  
Author(s):  
Y. Z. Liu ◽  
C. C. Wang ◽  
M. Chu
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Single Step ◽  
Low Threshold

High‐power, low‐threshold, single‐mode GaInAsP/InP laser by low‐temperature, single‐step liquid phase epitaxy

1984 ◽  
Vol 45 (4) ◽  
pp. 328-330 ◽  
Author(s):  
H. Horikawa ◽  
K. Imanaka ◽  
A. Matoba ◽  
Y. Kawai ◽  
M. Sakuta
Keyword(s):  
Liquid Phase ◽  
Low Temperature ◽  
High Power ◽  
Liquid Phase Epitaxy ◽  
Single Mode ◽  
Single Step ◽  
Low Threshold

Low threshold quantum well AlGaAs-heterolasers fabricated by low temperature liquid phase epitaxy

1991 ◽  
Author(s):  
V. M. Andreev ◽  
A. B. Kazantsev ◽  
V. R. Larlonov ◽  
V. D. Rumyantsev ◽  
V. P. Khvostikov
Keyword(s):  
Liquid Phase ◽  
Low Temperature ◽  
Quantum Well ◽  
Liquid Phase Epitaxy ◽  
Low Threshold ◽  
Temperature Liquid

Very low‐threshold separate‐confinement‐heterostructure lasers prepared by liquid phase epitaxy

1985 ◽  
Vol 58 (2) ◽  
pp. 1052-1053 ◽  
Author(s):  
S. Mukai ◽  
Y. Tsunekawa ◽  
Y. Takabe ◽  
H. Yajima
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Low Threshold

Extremely low threshold current AlGaAs buried‐heterostructure quantum well lasers grown by liquid phase epitaxy

1990 ◽  
Vol 57 (27) ◽  
pp. 2873-2875 ◽  
Author(s):  
Zh. I. Alferov ◽  
V. M. Andreyev ◽  
A. Z. Mereutza ◽  
A. V. Syrbu ◽  
V. P. Yakovlev
Keyword(s):  
Liquid Phase ◽  
Quantum Well ◽  
Liquid Phase Epitaxy ◽  
Threshold Current ◽  
Quantum Well Lasers ◽  
Buried Heterostructure ◽  
Low Threshold

Growth by liquid phase epitaxy and low-threshold laser oscillation at 2.012 μm of a Tm:YAG waveguide laser

1995 ◽  
Author(s):  
Corinne Borel ◽  
Armelle Rameix ◽  
Philippe Thony ◽  
Bernard Ferrand ◽  
David P. Shepherd ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Laser Oscillation ◽  
Waveguide Laser ◽  
Low Threshold
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