High-power high-temperature operation laser diode with InGaAsP/InP buried heterostructure fabricated by single-step liquid-phase epitaxy

1982 ◽  
Author(s):  
H. Nomura ◽  
M. Sugimoto ◽  
A. Suzuki
Keyword(s):  
High Temperature ◽  
Liquid Phase ◽  
Laser Diode ◽  
High Power ◽  
Liquid Phase Epitaxy ◽  
Single Step ◽  
Buried Heterostructure ◽  
High Temperature Operation

High-power and high-temperature operation of eight-element, monolithic, 780nm MQW laser diode array on 50 μm centres

1993 ◽  
Vol 29 (18) ◽  
pp. 1636 ◽  
Author(s):  
A. Shima ◽  
T. Kadowaki ◽  
T. Miura ◽  
M. Miyashita ◽  
S. Kageyama ◽  
...  
Keyword(s):  
High Temperature ◽  
Laser Diode ◽  
High Power ◽  
Diode Array ◽  
Laser Diode Array ◽  
High Temperature Operation

High Power and High Temperature Operation of InGaAsP/InP Buried Crescent Laser Diode emitting at 1.3μm

1984 ◽  
Author(s):  
Y. SAKAKIBARA ◽  
E. OOMURA ◽  
H. HIGUCHI ◽  
Y. NAKAJIMA ◽  
H. NAMIZAKI ◽  
...  
Keyword(s):  
High Temperature ◽  
Laser Diode ◽  
High Power ◽  
High Temperature Operation

High‐power, low‐threshold, single‐mode GaInAsP/InP laser by low‐temperature, single‐step liquid phase epitaxy

1984 ◽  
Vol 45 (4) ◽  
pp. 328-330 ◽  
Author(s):  
H. Horikawa ◽  
K. Imanaka ◽  
A. Matoba ◽  
Y. Kawai ◽  
M. Sakuta
Keyword(s):  
Liquid Phase ◽  
Low Temperature ◽  
High Power ◽  
Liquid Phase Epitaxy ◽  
Single Mode ◽  
Single Step ◽  
Low Threshold
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